Datasheet > MJE8503AAS

MJE8503AAS

更新时间： 2024-11-04 08:20:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
60页	342K
描述
5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE8503AAS 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN Bipolar Power Transistor

POWER TRANSISTORS

5.0 AMPERES

The MJE8503A transistor is designed for high voltage, high speed, power switching

in inductive circuits where fall time is critical. They are suited for line operated

switchmode applications such as:

1500 VOLTS — BV

80 WATTS

CES

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Featuring

•

1500 Volt Collector-Base Breakdown Capability

Fast Switching:

180 ns Typical Fall Times

450 ns Typical Crossover Times

1.2 µs Typical Storage Times

•

Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 V

CES

CASE 221A–06

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Symbol

Value

700

Unit

Vdc

Adc

CEO(sus)

Collector-Emitter Voltage

1500

5.0

CES

CBO

EBO

Collector-Base Voltage

Emitter-Base Voltage

Collector Current — Continuous

Collector Current — Peak (1)

5.0

Collector Current — Continuous

Collector Current — Peak

4.0

Adc

Total Power Dissipation @ T = 25°C

0.8

Watts

@ T = 100°C

Derate above 25°C

W/°C

°C

Operating and Storage Temperature Range

T , T

–65 to +125

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

°C/W

°C

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering Purposes

1/8″ from Case for 5 sec.

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

3–650

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...60

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与MJE8503AAS相关器件

型号	品牌	获取价格	描述	数据表
MJE8503AAU	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABA	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABC	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABD	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABG	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABS	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AF	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503AJ	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503C	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503D1	MOTOROLA	获取价格	5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB