Datasheet > MJE8503AAN

MJE8503AAN

更新时间： 2024-11-25 20:00:15

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
60页	342K
描述
5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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技术参数
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MJE8503AAN 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	PLASTIC, TO-220AB, 3 PIN	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.82	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	700 V
配置：	SINGLE	最小直流电流增益 (hFE)：	2.25
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	7 MHz	Base Number Matches：	1

MJE8503AAN 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN Bipolar Power Transistor

POWER TRANSISTORS

5.0 AMPERES

The MJE8503A transistor is designed for high voltage, high speed, power switching

in inductive circuits where fall time is critical. They are suited for line operated

switchmode applications such as:

1500 VOLTS — BV

80 WATTS

CES

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Featuring

•

1500 Volt Collector-Base Breakdown Capability

Fast Switching:

180 ns Typical Fall Times

450 ns Typical Crossover Times

1.2 µs Typical Storage Times

•

Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 V

CES

CASE 221A–06

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Symbol

Value

700

Unit

Vdc

Adc

CEO(sus)

Collector-Emitter Voltage

1500

5.0

CES

CBO

EBO

Collector-Base Voltage

Emitter-Base Voltage

Collector Current — Continuous

Collector Current — Peak (1)

5.0

Collector Current — Continuous

Collector Current — Peak

4.0

Adc

Total Power Dissipation @ T = 25°C

0.8

Watts

@ T = 100°C

Derate above 25°C

W/°C

°C

Operating and Storage Temperature Range

T , T

–65 to +125

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

°C/W

°C

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering Purposes

1/8″ from Case for 5 sec.

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

3–650

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...60

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与MJE8503AAN相关器件

型号	品牌	获取价格	描述	数据表
MJE8503AAS	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AAU	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABA	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABC	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABD	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABG	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABS	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AF	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503AJ	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503C	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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