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MJE2360TW PDF预览

MJE2360TW

更新时间: 2024-11-02 13:11:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 101K
描述
Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

MJE2360TW 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:30 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

MJE2360TW 数据手册

 浏览型号MJE2360TW的Datasheet PDF文件第2页浏览型号MJE2360TW的Datasheet PDF文件第3页浏览型号MJE2360TW的Datasheet PDF文件第4页 
Order this document  
by MJE2360T/D  
SEMICONDUCTOR TECHNICAL DATA  
0.5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
. . . useful for general–purpose, high voltage applications requiring high f .  
T
Collector–Emitter Sustaining Voltage —  
= 350 Vdc (Min) @ I = 2.5 mAdc  
350 VOLTS  
30 WATTS  
V
CEO(sus)  
DC Current Gain —  
= 40 (Min) @ I = 100 mAdc — MJE2361T  
C
h
FE  
Current–Gain–Bandwidth Product —  
= 10 MHz (Typ) @ I = 50 mAdc  
C
f
T
C
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
350  
375  
6.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
V
CEO  
V
CB  
V
EB  
CASE 221A–06  
TO–220AB  
I
C
0.5  
I
B
0.25  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
30  
0.24  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
4.167  
C/W  
JC  
40  
35  
30  
25  
20  
15  
10  
5.0  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power–Temperature Derating Curve  
REV 1  
Motorola, Inc. 1995

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