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MJE16004

更新时间： 2024-09-15 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
10页 427K
描述
5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS

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中文翻译

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MJE16004 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.57
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：5 A基于收集器的最大容量：200 pF
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：7JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：80 W
认证状态：Not Qualified表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：3300 ns
最大开启时间（吨）：400 nsVCEsat-Max：2.5 V

MJE16004 数据手册

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Order this document  
by MJE16002/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
These transistors are designed for high–voltage, high–speed switching of inductive  
circuits where fall time and RBSOA are critical. They are particularly well–suited for  
line–operated switchmode applications.  
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for  
applications where drive current is limited.  
5.0 AMPERE  
NPN SILICON  
POWER TRANSISTORS  
450 VOLTS  
80 WATTS  
Typical Applications:  
•
•
•
•
•
Switching Regulators  
High Resolution Deflection Circuits  
Inverters  
Motor Drives  
Fast Switching Speeds  
50 ns Inductive Fall Time @ 75 C (Typ)  
70 ns Crossover Time @ 75 C (Typ)  
100 C Performance Specified for:  
Reverse–Biased SOA  
•
Inductive Switching Times  
Saturation Voltages  
Leakage Currents  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
450  
850  
6.0  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
5.0  
10  
I
CM  
Base Current — Continuous  
— Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation @ T = 25 C  
P
80  
32  
0.64  
Watts  
C
D
@ T = 100 C  
C
Derate above T = 25 C  
C
W/ C  
C
Operating and Storage Junction Temperature Range  
T , T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.56  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds  
R
θJC  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 2  
Motorola, Inc. 1995
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