5秒后页面跳转
MJE16004-6200 PDF预览

MJE16004-6200

更新时间: 2024-09-16 19:26:55
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关晶体管
页数 文件大小 规格书
3页 89K
描述
5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB

MJE16004-6200 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.76
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
基于收集器的最大容量:200 pF集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):7
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:80 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):3050 ns最大开启时间(吨):400 ns
VCEsat-Max:2.5 VBase Number Matches:1

MJE16004-6200 数据手册

 浏览型号MJE16004-6200的Datasheet PDF文件第2页浏览型号MJE16004-6200的Datasheet PDF文件第3页 

与MJE16004-6200相关器件

型号 品牌 获取价格 描述 数据表
MJE16004-6203 RENESAS

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004-6226 RENESAS

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004-6258 RENESAS

获取价格

5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6261 RENESAS

获取价格

5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6263 RENESAS

获取价格

5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6264 RENESAS

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004-6265 RENESAS

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004A MOTOROLA

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004AF ONSEMI

获取价格

5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE16004AJ MOTOROLA

获取价格

5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB