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MJE15031AS

更新时间： 2024-09-15 13:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器局域网
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6页 80K
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中文翻译

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MJE15031AS 数据手册

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MJE15028, MJE15030 (NPN)  
MJE15029, MJE15031 (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use as high−frequency drivers in  
audio amplifiers.  
http://onsemi.com  
Features  
8 AMPERE  
• DC Current Gain Specified to 4.0 Amperes  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
120−150 VOLTS, 50 WATTS  
h
= 40 (Min) @ I = 3.0 Adc  
FE  
C
= 20 (Min) @ I = 4.0 Adc  
C
• Collector−Emitter Sustaining Voltage −  
V
= 120 Vdc (Min); MJE15028, MJE15029  
= 150 Vdc (Min); MJE15030, MJE15031  
CEO(sus)  
• High Current Gain − Bandwidth Product  
f = 30 MHz (Min) @ I = 500 mAdc  
T
C
• TO−220AB Compact Package  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
TO−220AB  
CASE 221A−09  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
MJE15028, MJE15029  
MJE15030, MJE15031  
V
Vdc  
CEO  
1
STYLE 1  
2
120  
150  
3
Collector−Base Voltage  
MJE15028, MJE15029  
MJE15030, MJE15031  
V
Vdc  
CB  
EB  
120  
150  
MARKING DIAGRAM  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
8.0  
16  
C
I
CM  
Base Current  
I
2.0  
Adc  
B
Total Device Dissipation @ T = 25_C  
P
50  
0.40  
W
C
D
Derate above 25°C  
W/_C  
W
W/_C  
_C  
MJE150xxG  
AY WW  
Total Device Dissipation @ T = 25_C  
P
2.0  
0.016  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to  
+150  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
MJE150xx = Device Code  
x = 28, 29, 30, or 31  
R
q
JA  
62.5  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MJE15028/D  
123456

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MJE15031BC ONSEMI

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 		8A, 150V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15031BD ONSEMI

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 		8A, 150V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15031BG ONSEMI

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 		暂无描述
MJE15031BS ONSEMI

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 		8A, 150V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15031BV ONSEMI

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 		8A, 150V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15031C MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE15031D1 MOTOROLA

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 		8A, 150V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE15031DW ONSEMI

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 		TRANSISTOR 8 A, 150 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE15031G ONSEMI

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 		8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
MJE15031L MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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