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MJE15031 PDF预览

MJE15031

更新时间: 2024-11-04 10:55:47
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无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 65K
描述
Silicon PNP Power Transistors

MJE15031 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJE15031  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type MJE15028/30  
·High transition frequency  
·DC Current Gain Specified to 4.0 Amperes  
hFE = 40 (Min) @ IC =- 3.0 Adc  
hFE = 20 (Min) @ IC = -4.0 Adc  
APPLICATIONS  
·Designed for use as high–frequency  
drivers in audio amplifiers.  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
-150  
-150  
-5  
UNIT  
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
Open base  
V
Open collector  
V
-8  
A
ICM  
-16  
A
IB  
-2  
A
Ta=25  
TC=25℃  
2
PD  
Total power dissipation  
W
50  
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance ; junction to case  
Thermal resistance , junction to ambient  
MAX  
2.5  
UNIT  
/W  
/W  
Rth j-C  
Rth j-A  
62.5  

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