MJE13007

更新时间： 2024-09-23 10:55:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	557K
描述
NPN Power Transistor 8.0 Amperes 400 Volts 2 Watts

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MJE13007 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MJE13007

Micro Commercial Components

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

NPN

Power Transistor

8.0 Amperes

•

Power dissipation: 2W (T_A=25℃)

Collector current: 8A

Operating and storage junction temperature range

T_J, T_stg: -55℃ +150℃

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

400 Volts 2 Watts

Maximum Ratings @ 25 C Unless Otherwise Noted

Symbol

Rating

Collector-Emitter Breakdown

Voltage (I_C=10mA, I_E=0)

Collector-Base Breakdown

Voltage

(I_C=1mA, I_B=0)

Emitter-Base Breakdown Voltage

(I_E=1mA, I_C=0)

Collector Cutoff Current

(V_CB=700V,I_E=0)

Emitter Cutoff Current

(V_BE=9.0V,I_C=0)

Type

---

Min

400

Max

---

Unit

TO-220

V_CEO

V_CBO

---

700

---

V_EBO

I_CBO

I_EBO

h_FE

9.0

---

µA

100

DC Current Gain

---

8.0

5.0

---

( I_C=2.0A,V_CE=5.0V)

( I_C=5.0A,V_CE=5.0V)

Collector-Emitter Saturation

Voltage

V_CE(SAT)

---

1.0

( I_C=2.0A, I_B=0.4A)

V_BE(SAT)

f_T

Base-Emitter Saturation Voltage

(I_C=2.0A, I_B=0.4A)

Current Gain-Bandwidth Product

( I_C=500mA, V_CE=10V, f =1.0MH_Z)

Output Capacitance

(V_CB=10V, I_E=0, f=0.1MHz)

----

---

4.0

---

1.2

---

MHz

C_ob

---

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

Fall Time

(V_CC=125V,

I_C=5.0A,

---

0.7

µs

Storage Time

I_B1=-I_B2=1.0A)

DIMENSIONS

INCHES

Classification of hFE(1)

MIN

14.22

9.65

MAX

15.88

10.67

NOTE

DIM

MIN

.560

MAX

.625

Rank

.380

.140

.420

.190

Range

8-15

15-20

20-25

25-30

30-35

35-40

3.56

4.82

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

.012

0.30

.500

.045

.580

.060

12.70

1.14

14.73

1.52

.190

.210

4.83

5.33

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

.045

1.15

www.mccsemi.com

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Revision: A

2011/01/01

12 3

中文翻译

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与MJE13007相关器件

型号	品牌	获取价格	描述	数据表
MJE13007（TO-262&263)	SISEMIC	获取价格	耐高压开关速度快安全工作区宽符合RoHS规范
MJE13007_06	KEC	获取价格	TO-220AB PACKAGE
MJE13007_08	KEC	获取价格	TRIPLE DIFFUSED NPN TRANSISTOR
MJE13007_10	UTC	获取价格	NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
MJE13007_13	UTC	获取价格	NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
MJE13007_15	UTC	获取价格	NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING
MJE1300716	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE1300716A	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007A	MOSPEC	获取价格	POWER TRANSISTORS(8A,400V,80W)
MJE13007A	STMICROELECTRONICS	获取价格	SILICON NPN SWITCHING TRANSISTOR

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