Datasheet > MJE13007AL(TO-220F)

MJE13007AL(TO-220F)

更新时间： 2024-09-23 14:53:43

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	154K
描述
Transistor

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技术参数
数据手册

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MJE13007AL(TO-220F) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	8 A
配置：	Single	最小直流电流增益 (hFE)：	8
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	80 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	4 MHz
Base Number Matches：	1

MJE13007AL(TO-220F) 数据手册

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UTC MJE13007

NPN EPITAXIAL SILICON TRANSISTOR

NPN BIPOLAR POWER TRANSISTOR

FOR SWITCHING POWER SUPPLY

APPLICATIONS

DESCRIPTION

The UTC MJE13007 is designed for high–voltage,

high–speed power switching inductive circuits where fall

time is critical. It is particularly suited for 115 and 220 V

switchmode applications.

FEATURES

* VCEO(sus) 400 V

* 700 V Blocking Capability

TO-220F

APPLICATIONS

*Switching Regulators

*Inverters

*Motor Controls

*Solenoid/Relay drivers

*Deflection circuits

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number:MJE13007L

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VCEO

VCES

VEBO

RATINGS

UNIT

Collector-Emitter Sustaining Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Voltage

400

700

9.0

8.0

4.0

8.0

Collector Current – Continuous

– Peak (1)

ICM

Base Current – Continuous

– Peak (1)

IBM

IEM

P^D

TJ, Tstg

Emitter Current – Continuous

– Peak (1)

Total Device Dissipation @ TC = 25℃

℃

Operating and Storage Temperature

-65 ~ +150

THERMAL CHARACTERISTICS RATINGS

PARAMETER

Thermal Resistance

SYMBOL

RATINGS

UNIT

RθJC

RθJA

℃/W

Junction to Case

1.56

62.5

Junction to Ambient

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a

location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6

to 8•lbs.

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R219-004,A

12 3 4 5

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