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MJE13007AF

更新时间： 2024-09-23 13:11:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
10页 340K
描述
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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MJE13007AF 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.58
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：5JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：80 W
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：3700 nsBase Number Matches：1

MJE13007AF 数据手册

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Order this document  
by MJE13007/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
POWER TRANSISTOR  
8.0 AMPERES  
400 VOLTS  
The MJE/MJF13007 is designed for high–voltage, high–speed power switching  
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V  
switchmode applications such as Switching Regulators, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
80/40 WATTS  
•
•
•
•
•
•
V
400 V  
CEO(sus)  
Reverse Bias SOA with Inductive Loads @ T = 100°C  
700 V Blocking Capability  
SOA and Switching Applications Information  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MJF13007 is UL Recognized to 3500 V  
C
, File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol MJE13007 MJF13007  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
400  
700  
9.0  
CEO  
V
CES  
EBO  
V
Collector Current — Continuous  
Collector Current — Peak (1)  
I
8.0  
16  
C
I
I
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
4.0  
8.0  
Adc  
Adc  
V
B
BM  
Emitter Current — Continuous  
Emitter Current — Peak (1)  
I
E
12  
24  
EM  
CASE 221A–06  
TO–220AB  
MJE13007  
RMS Isolation Voltage  
(for 1 sec, R.H. < 30%, T = 25°C)  
V
ISOL  
A
Test No. 1 Per Fig. 15  
Test No. 2 Per Fig. 16  
Test No. 3 Per Fig. 17  
—
—
—
4500  
3500  
1500  
Proper strike and creepage distance must  
be provided  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
80  
0.64  
40*  
0.32  
Watts  
W/°C  
C
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
R
R
°1.56°  
°62.5°  
°3.12°  
°62.5°  
°C/W  
θJC  
θJA  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
MJF13007  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
260  
°C  
L
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the  
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied  
*at a mounting torque of 6 to 8•lbs.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995
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