MJE13007AK

更新时间： 2024-09-23 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
12页	133K
描述
8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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技术参数
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MJE13007AK 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.65
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	400 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	14 MHz
Base Number Matches：	1

MJE13007AK 数据手册

ON Semiconductort

MJE13007

SWITCHMODEt

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE13007 is designed for high–voltage, high–speed power

switching inductive circuits where fall time is critical. It is particularly

suited for 115 and 220 V switchmode applications such as Switching

Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and

Deflection circuits.

POWER TRANSISTOR

8.0 AMPERES

400 VOLTS

80 WATTS

• V

400 V

CEO(sus)

• Reverse Bias SOA with Inductive Loads @ T = 100°C

• 700 V Blocking Capability

• SOA and Switching Applications Information

• Standard TO–220

MAXIMUM RATINGS

Rating

Symbol

MJE13007

400

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

CES

EBO

700

9.0

Collector Current — Continuous

Collector Current — Peak (1)

8.0

Base Current — Continuous

Base Current — Peak (1)

4.0

8.0

Adc

Emitter Current — Continuous

Emitter Current — Peak (1)

Total Device Dissipation @ T = 25°C

Watts

Derate above 25°C

0.64

W/°C

Operating and Storage Temperature

T , T

– 65 to 150

°C

CASE 221A–09

TO–220AB

MJE13007

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

°1.56°

°62.5°

°C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5

Seconds

260

°C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the

*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied

*at a mounting torque of 6 to 8•lbs.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 3

MJE13007/D

12 3 4 5 6 7...12

中文翻译

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与MJE13007AK相关器件

型号	品牌	获取价格	描述	数据表
MJE13007AL(TO-220F)	UTC	获取价格	Transistor
MJE13007ALEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE13007AN	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE13007AU	ONSEMI	获取价格	暂无描述
MJE13007BD	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE13007BL(TO-220F)	UTC	获取价格	Transistor
MJE13007C	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007C(TO-220F)	UTC	获取价格	Transistor
MJE13007CL(TO-220F)	UTC	获取价格	Transistor
MJE13007D	UTC	获取价格	NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS

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