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MJE13005BD

更新时间： 2024-11-11 19:50:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
7页 141K
描述
TRANSISTOR 4 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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MJE13005BD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.62外壳连接：COLLECTOR
最大集电极电流 (IC)：4 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：8
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

MJE13005BD 数据手册

 浏览型号MJE13005BD的Datasheet PDF文件第2页浏览型号MJE13005BD的Datasheet PDF文件第3页浏览型号MJE13005BD的Datasheet PDF文件第4页浏览型号MJE13005BD的Datasheet PDF文件第5页浏览型号MJE13005BD的Datasheet PDF文件第6页浏览型号MJE13005BD的Datasheet PDF文件第7页 
MJE13005G  
SWITCHMODEt Series  
NPN Silicon Power  
Transistors  
These devices are designed for high−voltage, high−speed power  
switching inductive circuits where fall time is critical. They are  
particularly suited for 115 and 220 V SWITCHMODE applications  
such as Switching Regulator’s, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
http://onsemi.com  
4 AMPERE  
NPN SILICON  
POWER TRANSISTOR  
400 VOLTS − 75 WATTS  
Features  
• V  
400 V  
CEO(sus)  
• Reverse Bias SOA with Inductive Loads @ T = 100_C  
C
• Inductive Switching Matrix 2 to 4 A, 25 and 100_C t @ 3A,  
c
100_C is 180 ns (Typ)  
• 700 V Blocking Capability  
• SOA and Switching Applications Information  
• These Devices are Pb−Free and are RoHS Compliant*  
TO−220AB  
CASE 221A−09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
400  
700  
9
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
2
3
V
CEO(sus)  
V
CEV  
V
EBO  
MARKING DIAGRAM  
Collector Current − Continuous  
− Peak (Note 1)  
I
4
8
C
I
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
2
4
Adc  
Adc  
B
BM  
MJE13005G  
AY WW  
Emitter Current  
− Continuous  
− Peak (Note 1)  
I
6
12  
E
EM  
Total Device Dissipation @ T = 25_C  
P
D
P
D
2
W
A
Derate above 25°C  
0.016  
W/_C  
Total Device Dissipation @ T = 25_C  
75  
0.6  
W
C
Derate above 25°C  
W/_C  
A
Y
= Assembly Location  
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to  
+150  
_C  
J
stg  
WW  
G
= Work Week  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
62.5  
1.67  
275  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
R
q
JC  
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Device  
Package  
Shipping  
50 Units / Rail  
MJE13005G  
TO−220  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 − Rev. 9  
MJE13005/D  
 
1234567

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MJE13005D UTC

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 		HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13005D KEC

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 		TRIPLE DIFFUSED NPN TRANSISTOR
MJE13005D(TO-220FP) SISEMIC

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 		耐高压 开关速度快 安全工作区宽 符合RoHS规范
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 		TRIPLE DIFFUSED NPN TRANSISTOR
MJE13005D_12 UTC

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