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MJE13005D_09 PDF预览

MJE13005D_09

更新时间: 2024-11-11 12:20:23
品牌 Logo 应用领域
KEC 晶体晶体管
页数 文件大小 规格书
4页 67K
描述
TRIPLE DIFFUSED NPN TRANSISTOR

MJE13005D_09 数据手册

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SEMICONDUCTOR  
MJE13005D  
TRIPLE DIFFUSED NPN TRANSISTOR  
TECHNICAL DATA  
HIGH VOLTAGE HIGH SPEED POWER SWITCH  
APPLICATION.  
A
Built-in Free wheeling Diode makes efficient anti saturation operation.  
Suitable for half bridge light ballast Applications.  
Low base drive requirement.  
O
C
F
DIM MILLIMETERS  
E
I
_
G
Q
A
B
C
D
E
F
9.9 + 0.2  
15.95 MAX  
1.3+0.1/-0.05  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
B
_
0.8+ 0.1  
SYMBOL RATING UNIT  
_
3.6 0.2  
+
_
2.8 + 0.1  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
800  
V
V
V
K
P
3.7  
G
H
I
400  
0.5+0.1/-0.05  
1.5  
M
N
L
J
10  
_
13.08+ 0.3  
J
D
K
L
M
N
O
P
1.46  
_
1.4 + 0.1  
DC  
5
H
N
Collector Current  
A
_
1.27+ 0.1  
1
2
3
ICP  
Pulse  
10  
2
_
2.54+ 0.2  
_
+
4.5 0.2  
_
IB  
Base Current  
A
+
2.4 0.2  
1. BASE  
_
9.2 + 0.2  
Q
2. COLLECTOR  
3. EMITTER  
1
2
3
PC  
75  
W
Collector Power Dissipation (Tc=25  
Junction Temperature  
)
Tj  
150  
Tstg  
Storage Temperature Range  
-55 150  
Equivalent Circuit  
C
TO-220AB  
B
E
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Emitter Cut-off Current  
SYMBOL  
IEBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
VEB=9V, IC=0  
-
18  
8
-
-
-
10  
35  
-
A
hFE(1)  
hFE(2)  
VCE=5V, IC=1A  
VCE=5V, IC=2A  
IC=1A, IB=0.2A  
IC=2A, IB=0.5A  
IC=4A, IB=1A  
DC Current Gain  
-
-
0.5  
0.6  
1
VCE(sat)  
Collector-Emitter Saturation Voltage  
-
-
V
-
-
IC=1A, IB=0.2A  
IC=2A, IB=0.5A  
VCB=10V, f=1MHz  
VCE=10V, IC=0.5A  
-
-
1.2  
1.6  
-
VBE(sat)  
Base-Emitter Saturation Voltage  
V
-
-
Cob  
fT  
Collector Output Capacitance  
Transition Frequency  
-
65  
-
pF  
4
-
MHz  
OUTPUT  
ton  
Turn-On Time  
Storage Time  
-
2
-
-
-
-
0.15  
5
S
S
S
300µS  
I
I
B1  
INPUT  
I
B1  
tstg  
B2  
I
B2  
I
B1=0.4A, IB2=-1A  
tf  
V
=300V  
Fall Time  
0.8  
CC  
<
DUTY CYCLE 2%  
=
VF  
IF=2A  
Diode Forward Voltage  
-
-
-
-
-
1.6  
V
nS  
S
IF=0.4A  
IF=1A  
IF=2A  
800  
1.4  
1.9  
-
-
-
trr  
*Reverse recovery tims (di/dt=10A/ S)  
S
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%  
Note : hFE Classification R : 18~27, O : 23~35  
2009. 2. 26  
Revision No : 4  
1/4  

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