Datasheet > MJE13005D_09

MJE13005D_09

更新时间： 2024-09-23 12:20:23

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
4页	67K
描述
TRIPLE DIFFUSED NPN TRANSISTOR

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数据手册

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MJE13005D_09 数据手册

SEMICONDUCTOR

MJE13005D

TRIPLE DIFFUSED NPN TRANSISTOR

TECHNICAL DATA

HIGH VOLTAGE HIGH SPEED POWER SWITCH

APPLICATION.

Built-in Free wheeling Diode makes efficient anti saturation operation.

Suitable for half bridge light ballast Applications.

Low base drive requirement.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.8+ 0.1

SYMBOL RATING UNIT

3.6 0.2

2.8 + 0.1

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

800

3.7

400

0.5+0.1/-0.05

1.5

13.08+ 0.3

1.46

1.4 + 0.1

Collector Current

1.27+ 0.1

I_CP

Pulse

2.54+ 0.2

4.5 0.2

I_B

Base Current

2.4 0.2

1. BASE

9.2 + 0.2

2. COLLECTOR

3. EMITTER

P_C

Collector Power Dissipation (Tc=25

Junction Temperature

)

T_j

150

T_stg

Storage Temperature Range

-55 150

Equivalent Circuit

TO-220AB

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Emitter Cut-off Current

SYMBOL

I_EBO

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_EB=9V, I_C=0

h_FE(1)

h_FE(2)

V_CE=5V, I_C=1A

V_CE=5V, I_C=2A

I_C=1A, I_B=0.2A

I_C=2A, I_B=0.5A

I_C=4A, I_B=1A

DC Current Gain

0.5

0.6

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C=1A, I_B=0.2A

I_C=2A, I_B=0.5A

V_CB=10V, f=1MHz

V_CE=10V, I_C=0.5A

1.2

1.6

V_BE(sat)

Base-Emitter Saturation Voltage

C_ob

f_T

Collector Output Capacitance

Transition Frequency

MHz

OUTPUT

t_on

Turn-On Time

Storage Time

0.15

300µS

INPUT

t_stg

_B1=0.4A, I_B2=-1A

t_f

=300V

Fall Time

0.8

DUTY CYCLE 2%

V_F

I_F=2A

Diode Forward Voltage

1.6

I_F=0.4A

I_F=1A

I_F=2A

800

1.4

1.9

t_rr

*Reverse recovery tims (di/dt=10A/ S)

*Pulse Test : Pulse Width = 5mS, Duty cycles 10%

Note : h_FEClassification R : 18~27, O : 23~35

2009. 2. 26

Revision No : 4

1/4

12 3 4

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