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MJE13005BU

更新时间： 2024-11-11 13:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 313K
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MJE13005BU 数据手册

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Order this document  
by MJE13005/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
4 AMPERE  
NPN SILICON  
POWER TRANSISTOR  
400 VOLTS  
These devices are designed for high–voltage, high–speed power switching  
inductive circuits where fall time is critical. They are particularly suited for 115 and  
220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor  
Controls, Solenoid/Relay drivers and Deflection circuits.  
75 WATTS  
SPECIFICATION FEATURES:  
•
•
•
V
400 V  
CEO(sus)  
Reverse Bias SOA with Inductive Loads @ T = 100 C  
Inductive Switching Matrix 2 to 4 Amp, 25 and 100 C  
C
. . . t @ 3A, 100 C is 180 ns (Typ)  
c
•
•
700 V Blocking Capability  
SOA and Switching Applications Information.  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
400  
700  
9
CEO(sus)  
V
CEV  
EBO  
V
Collector Current — Continuous  
— Peak (1)  
I
C
4
8
I
I
I
CM  
Base Current — Continuous  
— Peak (1)  
I
B
2
4
Adc  
Adc  
BM  
Emitter Current — Continuous  
— Peak (1)  
I
E
6
12  
EM  
Total Power Dissipation @ T = 25 C  
A
P
D
P
D
2
16  
Watts  
mW/ C  
Derate above 25 C  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
75  
600  
Watts  
mW/ C  
Operating and Storage Junction Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
1.67  
275  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
θJA  
θJC  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 3  
Motorola, Inc. 1995
12345678

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与MJE13005BU相关器件

型号 品牌 获取价格 描述 数据表
MJE13005BV ONSEMI

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 		4A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE13005C MOTOROLA

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 		Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE13005C(TO-220) UTC

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 		Transistor
MJE13005D UTC

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 		HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13005D KEC

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 		TRIPLE DIFFUSED NPN TRANSISTOR
MJE13005D(TO-220FP) SISEMIC

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 		耐高压 开关速度快 安全工作区宽 符合RoHS规范
MJE13005D_09 KEC

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 		TRIPLE DIFFUSED NPN TRANSISTOR
MJE13005D_12 UTC

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 		HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13005D_15 UTC

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 		HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13005DF KEC

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 		TO-220IS

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