Datasheet > MJE13005C(TO-220)

MJE13005C(TO-220)

更新时间： 2024-09-24 06:03:03

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友顺 - UTC		/
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Transistor

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MJE13005C(TO-220) 数据手册

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UTC MJE13005

NPN EPITAXIAL SILICON TRANSISTOR

NPN SILICON POWER

TRANSISTORS

DESCRIPTION

These devices are designed for high-voltage, high-speed

power switching inductive circuits where fall time is critical.

They are particularly suited for 115 and 220 V

SWITCHMODE.

FEATURES

TO-220

* VCEO (sus) 400 V

* Reverse Bias SOA with Inductive Loads @ TC = 100℃

* Inductive Switching Matrix 2 to 4 Amp, 25 and 100℃

. . . tc @ 3A, 100℃ is 180 ns (Typ)

* 700 V Blocking Capability

* SOA and Switching Applications Information

1: BASE 2: COLLECTOR 3: EMITTER

APPLICATIONS

* Switching Regulator’s, Inverters

* Motor Controls

* Solenoid/Relay drivers

* Deflection circuits

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO (sus)

400

Collector-Emitter Voltage

Emitter Base Voltage

Collector Current- Continuous

- Peak (1)

VCEV

VEBO

I^CM

I^BM

I^EM

700

600

Base Current- Continuous

- Peak (1)

Emitter Current- Continuous

- Peak (1)

Total Power Dissipation @ Ta=25℃

Derate above 25℃

Total Power Dissipation @ TC=25℃

Derate above 25℃

mW/℃

℃

Operating and Storage Junction Temperature Range

Tj , Tstg

-65 ~ +150

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RθJA

RθJC

MAX

62.5

1.67

UNIT

℃/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Maximum Lead Temperature for Soldering

Purposes: 1/8” from Case for 5 Seconds

(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%

℃

275

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R203-018,C

12 3 4 5 6

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