Datasheet > MJ11028

MJ11028

更新时间： 2024-09-25 22:46:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	157K
描述
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

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MJ11028 数据手册

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SEMICONDUCTOR TECHNICAL DATA

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•

High DC Current Gain — h

= 1000 (Min) @ I = 25 Adc

= 400 (Min) @ I = 50 Adc

•

Curves to 100 A (Pulsed)

Diode Protection to Rated I

Monolithic Construction with Built–In Base–Emitter Shunt Resistor

Junction Temperature to +200 C

*Motorola Preferred Device

MAXIMUM RATINGS

50 AMPERE

COMPLEMENTARY

SILICON

MJ11028 MJ11030 MJ11032

MJ11029 MJ11031 MJ11033

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

120

DARLINGTON

POWER TRANSISTORS

60–120 VOLTS

300 WATTS

Collector Current — Continuous

Peak

100

Base Current — Continuous

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C @ T = 100 C

300

1.71

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Maximum Lead Temperature for

275

CASE 197A–05

TO–204AE (TO–3)

Soldering Purposes for

10 seconds

Thermal Resistance Junction to Case

0.584

θJC

COLLECTOR

PNP

NPN

MJ11029

MJ11031

MJ11033

MJ11028

MJ11030

MJ11032

BASE

≈

3.0 k

≈

3.0 k

≈

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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