MJ11021G

更新时间： 2024-01-14 07:42:18

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
5页	79K
描述
Complementary Darlington Silicon Power Transistors

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中文翻译

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技术参数
数据手册
替代型号

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MJ11021G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.67	Base Number Matches：	1

MJ11021G 数据手册

MJ11021(PNP)

MJ11022 (NPN)

Complementary Darlington

Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed

for use as general purpose amplifiers, low frequency switching and

motor control applications.

http://onsemi.com

15 AMPERE

Features

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

• High dc Current Gain @ 10 Adc − h = 400 Min (All Types)

• Collector−Emitter Sustaining Voltage

= 250 Vdc (Min) − MJ11022, 21

CEO(sus)

• Low Collector−Emitter Saturation

250 VOLTS, 175 WATTS

CE(sat)

= 1.0 V (Typ) @ I = 5.0 A

= 1.8 V (Typ) @ I = 10 A

• 100% SOA Tested @

= 44 V

I = 4.0 A

TO−204 (TO−3)

CASE 1−07

STYLE 1

t = 250 ms

• Pb−Free Packages are Available*

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Symbol

Value

250

Unit

Vdc

CEO

CBO

EBO

MARKING DIAGRAM

250

Emitter−Base Voltage

Vdc

Adc

Collector Current − Continuous

− Peak (Note 1)

MJ1102xG

AYYWW

MEX

Base Current

0.5

Adc

Total Power Dissipation @ T = 25°C

Derate Above 25°C

175

1.16

W/°C

Operating and Storage Junction

Temperature Range

T , T

–65 to +175

−ꢀ 65 to +200

°C

stg

MJ1102x = Device Code

x = 1 or 2

THERMAL CHARACTERISTICS

MEX

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Orgin

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

0.86

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Device

Package

Shipping

MJ11021

TO−3

100 Units/Tray

MJ11021G

TO−3

(Pb−Free)

MJ11022

TO−3

100 Units/Tray

MJ11022G

TO−3

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

(Pb−Free)

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 2

MJ11021/D

12 3 4 5

中文翻译

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MJ11021G 替代型号

型号	品牌	替代类型	描述	数据表
MJ11021	MOSPEC	功能相似	POWER TRANSISTORS(15A,150-250V,175W)
MJ11021	ONSEMI	功能相似	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11021	MOTOROLA	功能相似	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

与MJ11021G相关器件

型号	品牌	获取价格	描述	数据表
MJ11022	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
MJ11022	Wing Shing	获取价格	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DR
MJ11022	MOTOROLA	获取价格	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
MJ11022	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11022	MOSPEC	获取价格	POWER TRANSISTORS(15A,150-250V,175W)
MJ11022	NJSEMI	获取价格	Trans Darlington NPN 250V 15A 3-Pin(2+Tab) TO-204 Tray
MJ11022G	ONSEMI	获取价格	Complementary Darlington Silicon Power Transistors
MJ11022HX	MOTOROLA	获取价格	Transistor
MJ11022HXV	MOTOROLA	获取价格	暂无描述
MJ11028	ONSEMI	获取价格	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

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