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MJ11016 PDF预览

MJ11016

更新时间: 2024-01-09 13:01:16
品牌 Logo 应用领域
CDIL 局域网
页数 文件大小 规格书
3页 176K
描述
SILICON PLANAR DARLINGTON POWER TRANSISTORS

MJ11016 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, METAL, TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.77
外壳连接:COLLECTOR最大集电极电流 (IC):30 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

MJ11016 数据手册

 浏览型号MJ11016的Datasheet PDF文件第2页浏览型号MJ11016的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
MJ11015 PNP  
MJ11016 NPN  
SILICON PLANAR DARLINGTON POWER TRANSISTORS  
Metal Can Package  
TO-3  
Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)  
VALUE  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
UNITS  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
120  
120  
5
V
30  
Collector Current Continuous  
Base Current  
A
IB  
1
200  
A
Collector Power Dissipation at Tc=25ºC  
Junction Temperature  
Storage Temperature Range  
PC  
W
ºC  
ºC  
Tj  
200  
Tstg  
- 55 to +200  
THERMAL RESISTANCE  
Junction to Case  
Rth(j-c)  
0.87  
ºC/W  
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
*VCEO  
TEST CONDITION  
MIN  
MAX  
UNITS  
V
IC=100mA, IB=0  
IC=20A, IB=0.2A  
Collector Emitter Voltage  
Collector Emitter Saturation Voltage  
120  
*VCE (Sat)  
3.0  
4.0  
3.5  
5.0  
1.0  
5.0  
1.0  
5.0  
V
IC=30A, IB=0.3A  
V
*VBE (Sat)  
IC=20A, IB=0.2A  
Base Emitter Saturation Voltage  
Collector Cut Off Current  
V
IC=30A, IB=0.3A  
V
ICER  
VCE=120V, RBE=1KW  
VCE=120V, RBE=1KW,TC=150ºC  
VCE=50V, IB=0  
mA  
mA  
mA  
mA  
ICEO  
IEBO  
*hFE  
Collector Cut Off Current  
Emitter Cut Off Current  
DC Current Gain  
VBE=5V, IC=0  
IC=20A, VCE=5V  
1000  
200  
IC=30A, VCE=5V  
*Pulse Test: Pulse Width <300ms, Duty Cycle <2%  
MJ11015_11016 Rev310310E  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

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