Datasheet > MJ11016NPN

MJ11016NPN

更新时间： 2024-09-25 01:19:39

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描述
SILICON PLANAR DARLINGTON POWER TRANSISTORS

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MJ11016NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

MJ11015 PNP

MJ11016 NPN

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Metal Can Package

TO-3

Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)

VALUE

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

120

Collector Current Continuous

Base Current

I_B

200

Collector Power Dissipation at T_c=25ºC

Junction Temperature

Storage Temperature Range

P_C

ºC

T_j

200

T_stg

- 55 to +200

THERMAL RESISTANCE

Junction to Case

R_th(j-c)

0.87

ºC/W

ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

*V_CEO

TEST CONDITION

MIN

MAX

UNITS

I_C=100mA, I_B=0

I_C=20A, I_B=0.2A

Collector Emitter Voltage

Collector Emitter Saturation Voltage

120

*V_{CE (Sat)}

3.0

4.0

3.5

5.0

1.0

5.0

1.0

5.0

I_C=30A, I_B=0.3A

*V_{BE (Sat)}

I_C=20A, I_B=0.2A

Base Emitter Saturation Voltage

Collector Cut Off Current

I_C=30A, I_B=0.3A

I_CER

V_CE=120V, R_BE=1KW

V_CE=120V, R_BE=1KW,T_C=150ºC

V_CE=50V, I_B=0

I_CEO

I_EBO

*h_FE

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

V_BE=5V, I_C=0

I_C=20A, V_CE=5V

1000

200

I_C=30A, V_CE=5V

*Pulse Test: Pulse Width <300ms, Duty Cycle <2%

MJ11015_11016 Rev310310E

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

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