MJ11017

更新时间： 2024-09-24 12:47:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	54K
描述
isc Silicon PNP Darlington Power Transistor

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MJ11017 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

MJ11017

DESCRIPTION

·High DC Current Gain-

: h_FE= 400(Min)@ I_C= -10A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -150V(Min)

·Low Collector-Emitter Saturation Voltage-

: V_CE(sat)= -2.0V(Max)@ I_C= -10A

= -3.4V(Max)@ I_C= -15A

·Complement to Type MJ11018

APPLICATIONS

·Designed for general purpose amplifiers ,low frequency

switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-150

-5

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

-15

I_CM

-30

I_B

-0.5

Collector Power Dissipation

@T_C=25℃

P_C

175

℃

Junction Temperature

175

T_j

Storage Temperature Range

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.86

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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