Datasheet > MJ11018

MJ11018

更新时间： 2024-01-02 14:31:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	237K
描述
DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

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MJ11018 数据手册

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by MJ11017/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use as general purpose amplifiers, low frequency switching and

motor control applications.

•

High dc Current Gain @ 10 Adc — h

Collector–Emitter Sustaining Voltage

= 400 Min (All Types)

= 150 Vdc (Min) – MJ11018, 17

= 250 Vdc (Min) – MJ11022, 21

CEO(sus)

*Motorola Preferred Device

•

Low Collector–Emitter Saturation

= 1.0 V (Typ) @ I = 5.0 A

CE(sat)

30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

= 1.8 V (Typ) @ I = 10 A

•

Monolithic Construction

100% SOA Tested @ V

= 44 V, I = 4.0 A, t = 250 ms.

MAXIMUM RATINGS

60–120 VOLTS

200 WATTS

MJ11018

MJ11017

MJ11022

MJ11021

Rating

Symbol

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

150

250

150

Collector Current —

Continuous Peak

Base Current

0.5

Adc

Total Device Dissipation @ T = 25 C

Derate Above 25 C

175

1.16

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +175

–65 to +200

stg

CASE 1–07

TO–204AA

(TO–3)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle

0.86

C/W

θJC

10%.

200

150

100

125

150

175

200

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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