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MIC5021YM-TR PDF预览

MIC5021YM-TR

更新时间： 2024-09-16 19:43:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
24页 1479K
描述
BUF OR INV BASED MOSFET DRIVER, PDSO8

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中文翻译

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MIC5021YM-TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：LEAD FREE, SOIC-8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：16 weeks风险等级：1.67
高边驱动器：YES接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：4.9 mm湿度敏感等级：3
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.879 mm最大供电电压：36 V
最小供电电压：12 V表面贴装：YES
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
断开时间：1.5 µs接通时间：1 µs
宽度：3.9 mmBase Number Matches：1

MIC5021YM-TR 数据手册

 浏览型号MIC5021YM-TR的Datasheet PDF文件第2页浏览型号MIC5021YM-TR的Datasheet PDF文件第3页浏览型号MIC5021YM-TR的Datasheet PDF文件第4页浏览型号MIC5021YM-TR的Datasheet PDF文件第5页浏览型号MIC5021YM-TR的Datasheet PDF文件第6页浏览型号MIC5021YM-TR的Datasheet PDF文件第7页 
MIC5021  
High-Speed, High-Side MOSFET Driver with Charge Pump  
and Overcurrent Limit  
Features  
General Description  
• 12V to 36V Operation  
The MIC5021 high-side MOSFET driver is designed to  
operate at frequencies up to 100 kHz (5 kHz PWM for  
2% to 100% duty cycle) and is an ideal choice for high  
speed applications such as motor control, SMPS  
(switch mode power supplies), and applications using  
IGBTs. The MIC5021 can also operate as a circuit  
breaker with or without automatic retry.  
• 550 ns Rise/Fall Time Driving 2000 pF  
• TTL-Compatible Input with Internal Pull-Down  
Resistor  
• Overcurrent Limit  
• Gate-to-Source Protection  
• Internal Charge Pump  
A rising or falling edge on the input results in a current  
source pulse or sink pulse on the gate output. This out-  
put current pulse can turn on a 2000 pF MOSFET in  
approximately 550 ns. The MIC5021 then supplies a  
limited current (<2 mA), if necessary, to maintain the  
output state.  
• 100 kHz Operation Guaranteed Over Full Tem-  
perature and Operating Voltage Range  
• Compatible with Current-Sensing MOSFETs  
• Current-Source Drive Reduces EMI  
Applications  
• Lamp Control  
An overcurrent comparator with a trip voltage of 50 mV  
makes the MIC5021 ideal for use with a current-sens-  
ing MOSFET. An external low value resistor may be  
used instead of a sensing MOSFET for more precise  
overcurrent control. An optional external capacitor  
placed from the CT pin to ground may be used to con-  
trol the current shutdown duty cycle (dead time) from  
20% to <1%. A duty cycle from 20% to about 75% is  
possible with an optional pull-up resistor from CT to  
• Heater Control  
• Motor Control  
• Solenoid Switching  
• Switch-Mode Power Supplies  
• Circuit Breaker  
VDD. Additional parts of the MIC502x family include the  
MIC5020 low-side driver and the MIC5022 half-bridge  
driver with a cross-conduction interlock. The MIC5021  
is available in 8-pin SOIC and plastic DIP packages.  
Typical Application Circuit  
MIC5021  
PDIP & SOIC  
High-Side Driver with Overcurrent Trip and Retry  
+12V to +36V  
MIC5021  
1
2
3
4
8
7
6
10μF  
TTL INPUT  
V
V
DD  
BOOST  
N-CHANNEL  
INPUT  
GATE  
POWER MOSFET  
C
SENSE-  
T
2.7  
nF  
OPTIONAL*  
SENSE+ 5  
GND  
RSENSE  
= 50mV  
RSENSE  
ITRIP  
LOAD  
* INCREASES TIME BEFORE RETRY  
2016 Microchip Technology Inc.  
DS20005677A-page 1  
 
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中文翻译

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MIC5021YM-TR 替代型号

型号 品牌 替代类型 描述 数据表
MIC5021YM MICROCHIP

类似代替

 BUF OR INV BASED MOSFET DRIVER, PDSO8

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