Datasheet > MI3045S

MI3045S

更新时间： 2024-09-17 10:57:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	146K
描述
Schottky Barrier Rectifier

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MI3045S 数据手册

New Product

M3035S, M3045S, MI3035S & MI3045S

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

TO-220AB

TO-262AA

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

M30xxS

MI30xxS

PIN 1

PIN 3

PIN 2

CASE

PIN 1

PIN 3

PIN 2

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection applications.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AB and TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

30 A

V_RRM

I_FSM

35 V, 45 V

200 A

V_Fat I_F= 30 A

T_Jmax.

0.61 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

M(I)3035S

M(I)3045S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

Peak repetitive reverse current per leg at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

T_J

2.0

V/µs

°C

10 000

Operating junction temperature range

Storage temperature range

- 65 to + 150

- 65 to + 175

T_STG

°C

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 15 A

I_F= 30 A

0.54

0.65

T_J= 25 °C

0.70

Maximum instantaneous

forward voltage ⁽¹⁾

V_F

I_F= 15 A

I_F= 30 A

0.46

0.61

T_J= 125 °C

0.66

Maximum instantaneous

reverse current at rated V_R

T_J= 25 °C

T_J= 125 °C

200

µA

I_R

(2)

Typical junction capacitance

Notes:

4.0 V, 1 MHz

C_J

980

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Document Number: 88952

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与MI3045S相关器件

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MI3045S-E3/4W	VISHAY	获取价格	Schottky Barrier Rectifier
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