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MI3045S-E3/4W PDF预览

MI3045S-E3/4W

更新时间: 2024-11-07 10:57:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线功效
页数 文件大小 规格书
4页 146K
描述
Schottky Barrier Rectifier

MI3045S-E3/4W 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.66 V
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:45 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MI3045S-E3/4W 数据手册

 浏览型号MI3045S-E3/4W的Datasheet PDF文件第2页浏览型号MI3045S-E3/4W的Datasheet PDF文件第3页浏览型号MI3045S-E3/4W的Datasheet PDF文件第4页 
New Product  
M3035S, M3045S, MI3035S & MI3045S  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Solder dip 260 °C, 40 s  
TO-220AB  
TO-262AA  
K
3
3
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
2
1
1
M30xxS  
MI30xxS  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 1  
PIN 3  
PIN 2  
TYPICAL APPLICATIONS  
K
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection applications.  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB and TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
IF(AV)  
30 A  
VRRM  
IFSM  
35 V, 45 V  
200 A  
VF at IF = 30 A  
TJ max.  
0.61 V  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
M(I)3035S  
M(I)3045S  
UNIT  
V
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
35  
45  
IF(AV)  
30  
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
A
Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
2.0  
A
V/µs  
°C  
10 000  
Operating junction temperature range  
Storage temperature range  
- 65 to + 150  
- 65 to + 175  
TSTG  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
IF = 15 A  
IF = 30 A  
0.54  
0.65  
-
TJ = 25 °C  
0.70  
Maximum instantaneous  
forward voltage (1)  
VF  
V
IF = 15 A  
IF = 30 A  
0.46  
0.61  
-
TJ = 125 °C  
0.66  
Maximum instantaneous  
reverse current at rated VR  
TJ = 25 °C  
TJ = 125 °C  
40  
26  
200  
55  
µA  
mA  
IR  
(2)  
Typical junction capacitance  
Notes:  
4.0 V, 1 MHz  
CJ  
980  
pF  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
Document Number: 88952  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

MI3045S-E3/4W 替代型号

型号 品牌 替代类型 描述 数据表
M3045S-M3/4W VISHAY

完全替代

DIODE 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
M3045S-E3/4W VISHAY

完全替代

Schottky Barrier Rectifier

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