Datasheet > MHV507-19-1-W

MHV507-19-1-W

更新时间： 2024-02-05 05:01:42

品牌	Logo	应用领域
泰科 - TE		二极管
页数	文件大小	规格书
4页	548K
描述
Silicon Hyperabrupt Varactor Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MHV507-19-1-W 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.28	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED

MHV507-19-1-W 数据手册

MHV507-19-1

Silicon Hyperabrupt Varactor Diode

Features

Rev. V1



High Capacitance Ratio: 3 Minimum

High Quality Factor: 1500 Typical

Compact Surface Mount Package

Ultra-thin Termination Plating to Combat

Embrittlement



RoHS* Compliant

Description

The MHV507-19-1 silicon hyperabrupt tuning

varactor offers

large change in junction

capacitance over a small tuning voltage range. It is a

mesa device with an epitaxial-deposited cathode

layer for low series resistance and high quality

factor. The die is passivated with a high-reliability

glass passivation for very fast settling time. This

varactor diode is packaged in an epoxy-

encapsulated surface mount package.

The MHV507-19-1 is ideally suited for voltage

controlled filters, analog voltage controlled phase

shifters and voltage controlled oscillators.

Electrical Specifications: T_A= +25°C

Parameter

Test Conditions

Units

Min.

Typ.

—

Max.

—

Breakdown Voltage (V_B)

Reverse Leakage Current (I_R)

I_R= 10 µA

V_R= 20 V

—

V_R= 0 V, 1 MHz

V_R= 4 V, 1 MHz

V_R= 20 V, 1 MHz

9.20

3.20

0.75

10.2

3.5

1.0

11.2

3.8

1.4

Total Capacitance (C_T)

Capacitance Ratio

Quality Factor (Q₄)

V_R= 4 V to V_R= 20 V, 1 MHz

V_R= 4 V, 50 MHz

Ratio

3.0

—

5.5

—

1500

—

Absolute Maximum Ratings

Ordering Information

Parameter

Absolute Maximum

22 V

Part Number

Package

Reverse DC Voltage

Forward DC Current

Assembly Temperature

Operating Temperature

Storage Temperature

MHV507-19-1-W

MHV507-19-R

100 piece waffle pack

3000 piece reel

50 mA

+260°C, 10 seconds

-55°C to +85°C

-55°C to +100°C

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

12 3 4

中文翻译

下载PDF

与MHV507-19-1-W相关器件

型号	品牌	获取价格	描述	数据表
MHV507-19-R	TE	获取价格	Silicon Hyperabrupt Varactor Diode
MHV5IC1810N	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHV5IC1810N_11	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHV5IC1810NR2	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHV5IC2215NR2	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHV5IC2215NR2_07	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHVIC2114NR2	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHVIC2114R2	MOTOROLA	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHVIC2114R2	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MHVIC2114R2	NXP	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,MOS,SOP,16PIN,PLASTIC

与MHV507-19-1-W相关文章

BSS123LT1资料解读：电气参数及替代型号推荐
2024-06-21

7
LTC1151C双通道±15V零漂移运算放大器全面解读
2024-06-21

9
CNX36手册解读：产品特性、应用及封装引脚详解
2024-06-21

6
PS9552资料解读：引脚信息、电气参数
2024-06-21

5

产品中心

服务支持

精选活动

关于我们

帮助中心

MHV507-19-1-W

MHV507-19-1-W 技术参数

MHV507-19-1-W 数据手册

与MHV507-19-1-W相关器件

与MHV507-19-1-W相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MHV507-19-1-W

MHV507-19-1-W 技术参数

MHV507-19-1-W 数据手册

与MHV507-19-1-W相关器件

与MHV507-19-1-W相关文章

您还可以找

您在本页遇到什么问题？