Datasheet > MHW10236N

MHW10236N

更新时间： 2024-09-24 03:49:23

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描述
Gallium Arsenide CATV Amplifier Module

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数据手册

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MHW10236N 数据手册

Document Number: MHW10236N

Rev. 0, 11/2006

Freescale Semiconductor

Technical Data

Gallium Arsenide

CATV Amplifier Module

MHW10236N

Features

• Specified for 79-, 112- and 132-Channel Loading

• Excellent Distortion Performance

• Integrated ESD Protection Diodes

• GaAs FET Transistor Technology

• Unconditionally Stable Under All Load Conditions

Applications

1000 MHz

23.8 dB GAIN

132-CHANNEL

GaAs CATV AMPLIFIER MODULE

• CATV Systems Operating in the 40 to 1000 MHz Frequency Range

• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk

Distribution Amplifiers for CATV Systems

• Driver Amplifier in Linear General Purpose Applications

Description

• 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module

• RoHS Compliant

CASE 1302-01, STYLE 1

Table 1. Maximum Ratings

Rating

Symbol

Value

+65

Unit

dBmV

Vdc

°C

RF Voltage Input (Single Tone)

DC Supply Voltage

+26

Operating Case Temperature Range

Storage Temperature Range

-20 to +100

-40 to +100

stg

°C

Table 2. ESD Maximum Ratings

Rating

Surge Voltage per IEC 1000-4-5

Human Body Model per Mil. Std. 1686

Input Value

Output Value

Unit

200

Table 3. Electrical Characteristics (V = 24 Vdc, T = +30°C, 75 Ω system unless otherwise noted)

Characteristic

Symbol

Min

Typ

—

Max

1000

24.5

1.2

Unit

MHz

Frequency Range

Power Gain

Slope

1000 MHz

23.8

0.55

—

40-1000 MHz

Gain Flatness (40-870 MHz, Peak-to-Valley)

Return Loss — Input

—

0.8

IRL

(Z = 75 Ohms)

40-500 MHz

501-870 MHz

871-1000 MHz

—

Return Loss — Output

ORL

(Z = 75 Ohms)

40-300 MHz

301-750 MHz

751-870 MHz

871-1000 MHz

—

MHW10236N

RF Device Data

Freescale Semiconductor

12 3 4 5

中文翻译

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