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MHVIC2114R2 PDF预览

MHVIC2114R2

更新时间： 2024-01-04 13:07:28
品牌 Logo 应用领域
恩智浦 - NXP 放大器射频微波
页数 文件大小 规格书
8页 643K
描述
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,MOS,SOP,16PIN,PLASTIC

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MHVIC2114R2 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SOP16,.35,32Reach Compliance Code：not_compliant
ECCN代码：5A991HTS代码：8542.31.00.01
风险等级：5.1Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：29 dB最大输入功率 (CW)：5 dBm
安装特点：SURFACE MOUNT功能数量：1
端子数量：16最大工作频率：2600 MHz
最小工作频率：1600 MHz最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：SOP16,.35,32
电源：27 V射频/微波设备类型：WIDE BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
技术：MOS最大电压驻波比：3
Base Number Matches：1

MHVIC2114R2 数据手册

 浏览型号MHVIC2114R2的Datasheet PDF文件第2页浏览型号MHVIC2114R2的Datasheet PDF文件第3页浏览型号MHVIC2114R2的Datasheet PDF文件第4页浏览型号MHVIC2114R2的Datasheet PDF文件第5页浏览型号MHVIC2114R2的Datasheet PDF文件第6页浏览型号MHVIC2114R2的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MHVIC2114R2/D  
The Wideband IC Line  
RF LDMOS Wideband Integrated  
Power Amplifier  
MHVIC2114R2  
The MHVIC2114R2 wideband integrated circuit is designed for base station  
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC  
technology and integrates a multi-stage structure. Its wideband On-Chip  
matching design makes it usable from 1600 to 2600 MHz. The linearity  
performances cover all modulation formats for cellular applications: CDMA and  
W-CDMA. The device is in a PFP-16 flat pack package that provides  
excellent thermal performance through a solderable backside contact.  
Final Application  
2100 MHz, 27 V, 23 dBm  
SINGLE W-CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIER  
• Typical Two-Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2  
204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band  
Power Gain — 32 dB  
=
IMD — -30 dBc  
Driver Application  
• Typical Single-Channel W-CDMA Performance: VDD = 27 Volts, IDQ1  
=
CASE 978-03  
PFP-16  
96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110-2170 MHz,  
3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64  
DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain — 32 dB  
ACPR — -58 dBc  
• P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz  
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW  
Output Power  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
and Common Source Scattering Parameters  
• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)  
• Integrated Temperature Compensation with Enable/Disable Function  
• Integrated ESD Protection  
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.  
PIN CONNECTIONS  
V
V
V
GS3  
GS2  
GS1  
Quiescent Current  
Temperature Compensation  
N.C.  
1
2
3
4
N.C.  
V
16  
15  
14  
13  
12  
11  
/RF  
/RF  
/RF  
/RF  
/RF  
V
DS3  
out  
out  
out  
out  
out  
GS3  
GS2  
GS1  
V
V
V
V
V
V
DS3  
DS3  
DS3  
DS3  
RF  
I
C
in  
V
/RF  
out  
DS3  
RF  
5
6
7
8
in  
in  
RF  
V
V
3 Stages I  
DS1  
DS2  
C
V
V
V
/RF  
DS3 out  
10  
9
DS1  
DS2  
N.C.  
(Top View)  
NOTE: Exposed backside flag is source  
terminal for transistors.  
Rev. 1  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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