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MHVIC910HNR2

更新时间: 2024-09-21 03:42:23
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飞思卡尔 - FREESCALE 放大器射频微波功率放大器高功率电源
页数 文件大小 规格书
12页 327K
描述
921 MHz-960 MHz SiFET RF Integrated Power Amplifier

MHVIC910HNR2 数据手册

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Document Number: MHVIC910HNR2  
Rev. 9, 5/2006  
Freescale Semiconductor  
Technical Data  
921 MHz-960 MHz SiFET  
RF Integrated Power Amplifier  
MHVIC910HNR2  
The MHVIC910HNR2 integrated circuit is designed for GSM base stations,  
uses Freescale’s newest High Voltage (26 Volts) LDMOS IC technology, and  
contains a three-stage amplifier. Target applications include macrocell (driver  
function) and microcell base stations (final stage). The device is in a PFP-16  
Power Flat Pack package which gives excellent thermal performances through  
a solderable backside contact.  
960 MHz, 10 W, 26 V  
GSM CELLULAR  
RF LDMOS INTEGRATED CIRCUIT  
Typical GSM Performance: VDD = 26 Volts, IDQ = 150 mA, Pout = 10 Watts,  
Full Frequency Band (921-960 MHz)  
Power Gain — 39 dB (Typ)  
Power Added Efficiency — 48% (Typ)  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW  
Output Power  
16  
Stable into a 10:1 VSWR. All Spurs Below -60 dBc @ 0 to 40 dBm CW  
1
Pout  
.
Features  
CASE 978-03  
PFP-16  
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)  
Integrated ESD Protection  
Usable Frequency Range — 921 to 960 MHz  
RoHS Compliant  
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
dBm  
°C  
Drain Supply Voltage  
V
28  
DD  
GS  
Gate Supply Voltage  
V
6
5
RF Input Power  
P
in  
Case Operating Temperature  
Storage Temperature Range  
Operating Channel Temperature  
T
C
- 30 to + 85  
- 65 to + 150  
150  
T
stg  
°C  
T
ch  
°C  
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
2.9  
°C/W  
θ
JC  
V
D1  
V
D2  
V
D3  
N.C.  
1
2
3
4
16  
15  
14  
13  
N.C.  
V
D2  
V
D3  
V
D3  
/RF  
out  
out  
/RF  
V
D1  
GND  
V
D3  
V
D3  
V
D3  
/RF  
/RF  
/RF  
out  
out  
out  
RF  
in  
RF  
out  
RF  
in  
GATE1  
5
6
7
8
12  
11  
10  
9
V
V
V
GATE2  
N.C.  
N.C.  
GATE3  
(Top View)  
V
GATE1  
V
GATE2  
V
GATE3  
Note: Exposed backside flag is source  
terminal for transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  

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