Datasheet > MGA-412P8_08

MGA-412P8_08

更新时间： 2024-01-10 20:37:59

品牌	Logo	应用领域
安华高科 - AVAGO		放大器功率放大器
页数	文件大小	规格书
8页	264K
描述
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications

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MGA-412P8_08 数据手册

MGA-412P8

GaAs Enhancement-mode pHEMT Power Ampliﬁer

optimized for IEEE 802.11b/g applications

Data Sheet

Description

Features

Avago Technologies’s MGA-412P8 linear power am-

pliﬁer is designed for applications in the (1.7-3) GHz

frequency range. The ampliﬁer is optimized for IEEE

• Advanced GaAs E-pHEMT

• Integrated power detector & power down functions

802.11b/g WLAN applications and has a best-in-class • High eﬃciency

eﬃciency (PAE) of 25.5% (54Mbps OFDM) achieved

• Single +3.3V Supply

through the use of Avago Technologies’ proprietary

• Small Footprint: 2x2mm

GaAs Enhancement-mode pHEMT process.

• Low Proﬁle: 0.8mm max.

The MGA-412P8 is housed in a miniature 2.0 x 2.0 x

0.75mm 8-lead leadless-plastic-chip-carrier (LPCC)

Speciﬁcations

package. The compact footprint, low proﬁle and excellent

thermal eﬃciency of the LPCC package makes the MGA-

412P8 an ideal choice as a power ampliﬁer for mobile IEEE

802.11b/g WLAN applications.

• At 2.452 GHz; 3.3V (Typ.) :

• Gain: 25.5 dB

• P1dB: 25.3 dBm

It achieves +19.0 dBm linear output power that meets 3%

EVM at 54Mbps data rate (OFDM Modulation), and 23dBm

at 11Mbps (CCCK modulation).

• Pout linear with IEEE 802.11g OFDM modulation

@54Mbps data rate: 19.0 dBm @ 3% EVM.

• Current @19dBm linear Pout: (54Mbps) : 95mA

• Reverse Isolation (typ): > 40dB

Component Image

• Quiescent current (typ): 40mA

2.0 x 2.0 x 0.75 mm

8-lead LPCC

• Meets IEEE 802.11b @11Mbps (CCCK modulation)

with Pout: 23dBm while consuming 200mA.

Pin 1

Pin 8

Applications

Pin 2

Pin 3

Pin 4

Pin 7

Pin 6

Pin 5

• Power Ampliﬁer for IEEE 802.11b/g WLAN applica-

tions

• Bluetooth Power Ampliﬁer

Bottom View

• 2.4GHz ISM band applications

8:Det

1:Gnd

7:RFout

2:RFin

2:Gnd

4:Vdd1

1CX

6:Vdd2

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 50 V

5:Pwr Down

ESD Human Body Model = 200 V

Refer to Avago Technologies Application

Note A004R: Electrostatic Discharge,

Damage and Control.

Top View

Note:

Package marking provides Orientation and Identification

"1C" = Product Code

"X" = Date code indicates month of manufacture

12 3 4 5 6 7 8

中文翻译

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与MGA-412P8_08相关器件

型号	品牌	获取价格	描述	数据表
MGA-412P8-BLKG	AVAGO	获取价格	GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-412P8-TR1G	AVAGO	获取价格	GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-412P8-TR2G	AVAGO	获取价格	GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-425P8	ETC	获取价格	GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
MGA-425P8_07	AVAGO	获取价格	GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
MGA-425P8-BLK	AVAGO	获取价格	GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
MGA-425P8-TR1	AVAGO	获取价格	GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
MGA-425P8-TR2	AVAGO	获取价格	GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
MGA-43003	AVAGO	获取价格	High Linearity (1.805 â 1.88) GHz Power Amp
MGA-43003_16	AVAGO	获取价格	High Linearity (1.805 â 1.88) GHz Power Amp

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