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MGA-425P8 PDF预览

MGA-425P8

更新时间: 2024-01-30 04:38:13
品牌 Logo 应用领域
其他 - ETC 放大器功率放大器PC
页数 文件大小 规格书
15页 137K
描述
GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package

MGA-425P8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOLCC8,.08,20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:7.7
特性阻抗:50 Ω构造:COMPONENT
增益:14.5 dB最大输入功率 (CW):13 dBm
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:8
最大工作频率:10000 MHz最小工作频率:2000 MHz
封装主体材料:PLASTIC/EPOXY封装等效代码:SOLCC8,.08,20
电源:3.3 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:65 mA
表面贴装:YES技术:GAAS
端子面层:Matte Tin (Sn)最大电压驻波比:2
Base Number Matches:1

MGA-425P8 数据手册

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Agilent MGA-425P8  
GaAs Enchancement-mode  
PHEMT Power Amplifier in  
2x2 mm2 LPCC Package  
Data Sheet  
Features  
Near 50broadband output match  
Single +3.3V supply  
High Gain & OIP3  
Description  
Pin Connections and  
Package Marking  
2.0 x 2.0 x 0.75 mm 8-lead LPCC  
Agilent Technologies’s MGA-425P8  
power amplifier is designed for  
wireless application in the  
Miniature 2 x 2 x 0.75 mm  
LPCC package  
2–10 GHz frequency range. The PA  
has a high power efficiency (PAE)  
achieved through the use of Agilent  
Technologies’s proprietary GaAs  
Enhancement-mode pHEMT process.  
Pb-free & MSL-1 package  
Pin 1 (NC)  
Pin 8 (NC)  
Tape-and-Reel packaging  
option available  
Pin 2 (RFin)  
Pin 3 (NC)  
Pin 4 (NC)  
Pin 7 (RFout, VD)  
Pin 6 (NC)  
2YX  
Pin 5 (RBias)  
Specifications  
at 5.25 GHz, 3.3V, 58 mA (typ)  
Top View  
MGA-425P8 is housed in a miniature  
2.0 x 2.0 x 0.75 mm 8-lead leadless-  
plastic-chip-carrier (LPCC) package.  
The compact footprint, low profile  
couple with the excellent thermal  
efficiency of the LPCC package  
makes the MGA-425P8 an ideal  
choice as power amplifier that saves  
board space.  
Note:  
Package marking provides orientation and  
identification  
13.3 dBm Linear Pout @ 5% EVM  
10.3% PAE @ +13.3 dBm Pout  
12 dBm Linear Pout @ 3% EVM  
7.6% PAE @ + 12 dBm Pout  
47% PAE @ P1dB  
“2Y” = Device Code  
“X” = Data code indicates the month of  
manufacture.  
Pin 1 (NC)  
Pin 8 (NC)  
Pin 2 (RFin)  
Pin 7 (RFout, VD)  
Pin 6 (NC)  
GND  
20.3 dBm P1dB  
On-chip bias circuitry allows  
operation from a single +3.3V  
power supply. The output of the  
amplifier is near to 50(below 2:1  
VSWR) around 4.9–5.8 GHz. This  
makes MGA-425P8 an ideal choice  
as power amplifier for broadband  
IEEE 802.11a system as well as  
other high performance wireless  
application in the 2–10 GHz  
frequency range.  
Pin 3 (NC)  
Pin 4 (NC)  
32.9 dBm OIP3  
Pin 5 (RBias)  
16 dB Gain  
Bottom View  
Note:  
1.7 dB NF  
Use Die Attach Padded for electrical grounding  
and thermal dissipation  
Simplified Schematic  
Vd  
Attention:  
Id=Ids + Ibias  
I
bias  
Observe precautions for  
handling electrostatic  
sensitive devices.  
I
ds  
One external resistor (RBias) is  
used to set the bias current of the  
device over a wide range.  
R
V
bias  
bias  
5
2
7
ESD Machine Model (Class A)  
ESD Human Body Model (Class 1A)  
This allows the designer to use the  
same part in several circuit posi-  
tions and tailor the output power/  
linearity performance, and current  
consumption, to suit each position.  
Bias  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
1, 3, 4, 6, 8  

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