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MGA-43003 PDF预览

MGA-43003

更新时间: 2024-02-02 06:05:27
品牌 Logo 应用领域
安华高科 - AVAGO /
页数 文件大小 规格书
17页 546K
描述
High Linearity (1.805 – 1.88) GHz Power Amplifi er Module

MGA-43003 数据手册

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MGA-43003  
High Linearity (1.805 – 1.88) GHz Power Amplifier Module  
Data Sheet  
Description  
Features  
[1]  
Avago TechnologiesMGA-43003 is a fully matched power High linearity performance : Typ -48dBc ACLR1  
at  
amplifier for use in the (1.805-1.88) GHz band. High linear  
output power at 5V is achieved through the use of Avago  
Technologies’ proprietary 0.25um GaAs Enhancement-  
mode pHEMT process. MGA-43003 is housed in a miniature  
5.0mm x 5.0mm molded-chip-on-board (MCOB) module  
package. A detector is also included on-chip. The compact  
footprint coupled with high gain, high linearity and good  
efficiency makes the MGA-43003 an ideal choice as a  
power amplifier for small cell BTS PA applications.  
27.0dBm linear output power (biased with 5V supply)  
High Gain : 41.7dB  
Good efficiency  
Fully matched  
Built-in detector  
[2]  
GaAs E-pHEMT Technology  
Low cost small package size: (5.0 x 5.0 x 0.9) mm  
Specifications  
Applications  
1.842GHz; 5.0V, Idq=360mA (typ), LTE DL E-TM1.1, 20MHz  
100RB, downlink signal  
Final stage high linearity amplifier for Picocell and  
Enterprise Femtocell PA targeted for small cell BTS  
downlink applications.  
PAE : 14%  
[1]  
27.0dBm linear Pout @ ACLR1 =-48dBc  
Component Image  
41.7dB Gain  
5.0 x 5.0 x 0.9 mm Package Outline  
Detector range : 20dB  
A
VAGO  
Notes:  
Note:  
Package marking provides orientation  
and identification  
”43003= Device part number  
”YYWW= Year and work week  
”XXXX” = Assembly lot number  
43003  
YYWW  
XXXX  
1. LTE DL E-TM1.1, 20MHz 100RB, downlink signal  
2. Enhancement mode technology employs positive Vgs, thereby  
eliminating the need of negative gate voltage associated with  
conventional depletion mode devices.  
Functional Block Diagram  
TOP VIEW  
Vdd1  
Vdd2  
Vdd3  
Pin Configuration  
st  
nd  
rd  
1
Stage  
2 Stage  
RFin  
3
Stage  
RFout  
Gnd  
Gnd  
NC  
1
2
3
4
5
6
7
21 Gnd  
Biasing Circuit  
Vc1 Vc2 Vc3 VddBias Vdet  
20 Gnd  
19 RFout  
18 RFout  
17 RFout  
16 Gnd  
RFin  
NC  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model = 60 V  
Gnd  
NC  
(5.0 x 5.0 x 0.9) mm  
15 Gnd  
ESD Human Body Model = 400 V  
Refer to Avago Application Note A004R:  
Electrostatic Discharge, Damage and Control.  

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