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MGA-412P8-TR2G

更新时间： 2024-01-29 02:00:29
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
8页 125K
描述
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications

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中文翻译

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MGA-412P8-TR2G 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SOLCC8,.08,20Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.82Is Samacsys：N
构造：COMPONENT增益：23 dB
最大输入功率 (CW)：10 dBmJESD-609代码：e3
安装特点：SURFACE MOUNT功能数量：1
端子数量：8最大工作频率：3000 MHz
最小工作频率：1700 MHz封装主体材料：PLASTIC/EPOXY
封装等效代码：SOLCC8,.08,20电源：3.3 V
射频/微波设备类型：WIDE BAND MEDIUM POWER子类别：RF/Microwave Amplifiers
最大压摆率：55 mA表面贴装：YES
技术：GAAS端子面层：Matte Tin (Sn)
Base Number Matches：1

MGA-412P8-TR2G 数据手册

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MGA-412P8  
GaAs Enhancement-mode pHEMT Power Amplifier  
optimized for IEEE 802.11b/g applications  
Data Sheet  
Description  
Features  
Avago Technologies’s MGA-412P8 linear power  
amplifier is designed for applications in the (1.7-3)  
GHz frequency range. The amplifier is optimized for  
IEEE 802.11b/g WLAN applications and has a best-in-  
class efficiency (PAE) of 25.5% (54Mbps OFDM)  
achieved through the use of Avago Technologies’  
proprietary GaAs Enhancement-mode pHEMT  
process.  
• Advanced GaAs E-pHEMT  
• Integrated power detector & power down functions  
• High efficiency  
• Single +3.3V Supply  
• Small Footprint: 2x2mm  
2
• Low Profile: 0.8mm max.  
The MGA-412P8 is housed in a miniature 2.0 x 2.0 x  
Specifications  
3
0.75mm 8-lead leadless-plastic-chip-carrier (LPCC)  
package. The compact footprint, low profile and  
excellent thermal efficiency of the LPCC package  
makes the MGA-412P8 an ideal choice as a power  
amplifier for mobile IEEE 802.11b/g WLAN  
applications.  
• At 2.452 GHz; 3.3V (Typ.) :  
• Gain: 25.5 dB  
• P1dB: 25.3 dBm  
• Pout linear with IEEE 802.11g OFDM modulation  
It achieves +19.0 dBm linear output power that meets  
3% EVM at 54Mbps data rate (OFDM Modulation),  
and 23dBm at 11Mbps (CCCK modulation).  
@54Mbps data rate: 19.0 dBm @ 3% EVM.  
• Current @19dBm linear Pout: (54Mbps) : 95mA  
• Reverse Isolation (typ): > 40dB  
• Quiescent current (typ): 40mA  
Component Image  
2.0 x 2.0 x 0.75 mm  
8-lead LPCC  
• Meets IEEE 802.11b @11Mbps (CCCK modulation)  
with Pout: 23dBm while consuming 200mA.  
Applications  
Pin 1  
Pin 8  
Pin 2  
Pin 3  
Pin 4  
Pin 7  
Pin 6  
Pin 5  
• Power Amplifier for IEEE 802.11b/g WLAN  
applications  
• Bluetooth Power Amplifier  
Bottom View  
• 2.4GHz ISM band applications  
8:Det  
1:Gnd  
Attention:Observeprecautionsforhandling  
electrostatic sensitive devices.  
ESD Machine Model = 50 V  
ESD Human Body Model = 200 V  
Refer to Avago Technologies Application  
Note A004R: Electrostatic Discharge,  
Damage and Control.  
7:RFout  
2:RFin  
2:Gnd  
4:Vdd1  
1CX  
6:Vdd2  
5:Pwr Down  
Top View  
Note:  
Package marking provides Orientation and Identification  
"1C" = Product Code  
"X" = Date code indicates month of manufacture  
12345678

中文翻译

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MGA-412P8-TR2G 替代型号

型号 品牌 替代类型 描述 数据表
MGA-412P8-TR1G AVAGO

功能相似

 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications

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