Datasheet > MEO450-12DA

MEO450-12DA

更新时间： 2024-09-20 11:02:51

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
2页	55K
描述
Fast Recovery Epitaxial Diode (FRED) Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MEO450-12DA 数据手册

MEO 450-12 DA V_RRM= 1200 V

I_FAVM= 453 A

Fast Recovery

Epitaxial Diode

(FRED) Module

t_rr

= 450 ns

Preliminary data

V_RSM

V_RRM

Type

1200

MEO 450-12DA

Symbol

I_FRMS

Test Conditions

Maximum Ratings

640

453

2460

Features

T_C= 75°C

●

I_FAVM

I_FRM

●

T_C= 75°C; rectangular, d = 0.5

t_P< 10 ms; rep. rating, pulse width limited by T_VJM

International standard package

with DCB ceramic base plate

Planar passivated chips

Short recovery time

●

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

4800

5280

t = 8.3 ms (60 Hz), sine

Low switching losses

4320

4750

T_VJ= 150°C; t = 10 ms (50 Hz), sine

Soft recovery behaviour

Isolation voltage 3600 V~

UL registered E 72873

t = 8.3 ms (60 Hz), sine

I²t

T_VJ= 45°C; t = 10 ms (50 Hz), sine

A²s

115200

117100

t = 8.3 ms (60 Hz), sine

T_VJ= 150°C; t = 10 ms (50 Hz), sine

A²s

93300

94800

Applications

Antiparallel diode for high frequency

t = 8.3 ms (60 Hz), sine

●

-40...+150

-40...+125

110

T_VJ

T_stg

T_Smax

°C

switching devices

Free wheeling diode in converters

and motor control circuits

Inductive heating and melting

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

●

1750

P_tot

T_C= 25°C

V_ISOL

50/60 Hz, RMS t = 1 min

I_ISOL£ 1 mA

3000

3600

t = 1 s

M_d

Mounting torque (M6)

Terminal connection torque (M6)

2.25-2.75/20-25 Nm/lb.in.

4.50-5.50/40-48 Nm/lb.in.

Advantages

●

High reliability circuit operation

Low voltage peaks for reduced

d_S

d_A

Creeping distance on surface

Strike distance through air

Maximum allowable acceleration

12.7

9.6

m/s²

●

protection circuits

Low noise switching

Low losses

●

Weight

150

●

Symbol

Test Conditions

Characteristic Values (per diode)

typ. max.

Dimensions in mm (1 mm = 0.0394")

I_R

T_VJ= 25°C

T_VJ= 125°C V_R= 0.8 • V_RRM

V_R= V_RRM

V_R= 0.8 • V_RRM

120

300

1.51

1.78

1.76

1.96

V_F

I_F=

A; T_VJ= 125°C

T_VJ= 25°C

A; T_VJ= 125°C

T_VJ= 25°C

520

I_F=

V_T0

r_T

For power-loss calculations only

1.16

1.15

R_thJH

R_thJC

DC current

0.114

0.071

K/W

t_rr

I_RM

I_F

V_R=

600 A

600 V

-di/dt = 800 A/ms

T_VJ= 100°C

T_VJ25°C

T_VJ= 100°C

450

500

110

165

● I_FAVMrating includes reverse blocking losses at T_VJM, V_R= 0.6 V_RRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1 - 2

中文翻译

下载PDF

与MEO450-12DA相关器件

型号	品牌	获取价格	描述	数据表
MEO500-06DA	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED) Module
MEO550-02DA	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED) Module
MEO550-02DA	LITTELFUSE	获取价格	快速单二极管系列提供各种封装和高达1200V的击穿电压。利用FRED芯片实现快速反向恢复
MEP4435Q8	CYSTEKEC	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MEP4435Q8_14	CYSTEKEC	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MEP4435Q8-0-T3-G	CYSTEKEC	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MEPA-11M0-B	MSYSTEM	获取价格	Plug-in Signal Conditioners M-UNIT
MEPA-11M0-B/Q	MSYSTEM	获取价格	Plug-in Signal Conditioners M-UNIT
MEPA-11M0-C	MSYSTEM	获取价格	Plug-in Signal Conditioners M-UNIT
MEPA-11M0-C/Q	MSYSTEM	获取价格	Plug-in Signal Conditioners M-UNIT

与MEO450-12DA相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

31
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

29
SL74HC10N：高性能三输入与非门解析
2024-09-03

100
AIC1781A 电池充电控制器深度解析
2024-09-03

96

产品中心

服务支持

精选活动

关于我们

帮助中心

MEO450-12DA

MEO450-12DA 数据手册

与MEO450-12DA相关器件

与MEO450-12DA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MEO450-12DA

MEO450-12DA 数据手册

与MEO450-12DA相关器件

与MEO450-12DA相关文章

您还可以找

您在本页遇到什么问题？