Datasheet > MEP4435Q8-0-T3-G

MEP4435Q8-0-T3-G

更新时间： 2024-09-21 01:16:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	399K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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MEP4435Q8-0-T3-G 数据手册

Spec. No. : C391Q8-A

Issued Date : 2008.07.17

Revised Date : 2014.03.05

Page No. : 1/9

CYStech Electronics Corp.

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS

-30V

-13A

MEP4435Q8

9.3mΩ(typ.)

14mΩ(typ.)

15mΩ(typ.)

RDSON(MAX)@VGS=-10V, ID=-10A

RDSON(MAX)@VGS=-5V, ID=-7A

RDSON(MAX)@VGS=-4.5V, ID=-5A

Description

The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications

and suited for low voltage applications such as DC/DC converters.

Features

• Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free lead plating package

Equivalent Circuit

Outline

MEP4435Q8

SOP-8

G：Gate

S：Source

D：Drain

MEP4435Q8

CYStek Product Specification

12 3 4 5 6 7...9

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