Datasheet > MDU06N031VRH

MDU06N031VRH

更新时间： 2024-09-16 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	975K
描述
Single N-channel Trench MOSFET 60V, 100A, 3.1m(ohm)

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MDU06N031VRH 数据手册

MDU06N031

Single N-channel Trench MOSFET 60V, 100A, 3.1mΩ

General Description

Features

The MDU06N031 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDU06N031 is suitable device for Synchronous

Rectification For Server and general purpose applications.



V_DS= 60V

I_D= 100A @V_GS= 10V

R_DS(ON)

< 3.1mΩ @V_GS= 10V

100% UIL Tested

100% Rg Tested



PDFN56

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

164.7

100.0

104.2

22.2⁽³⁾

400.0

138.9

55.6

T_C=25^oC (Package Limited)

T_C=100^oC (Silicon Limited)

T_A=25^oC⁽³⁾

Continuous Drain Current ⁽¹⁾

I_D

Pulsed Drain Current

Power Dissipation

I_DM

T_C=25^oC

T_C=100^oC

T_A=25^oC⁽³⁾

P_D

2.5⁽³⁾

Single Pulse Avalanche Energy ⁽²⁾

E_AS

288

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

50.0

Unit

^oC/W

R_θJC

0.9

Jun. 2015. Rev. 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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