Datasheet > MDU10N070RH

MDU10N070RH

更新时间： 2024-09-16 17:15:55

品牌	Logo	应用领域
美格纳 - MGCHIP		光电二极管
页数	文件大小	规格书
6页	1272K
描述
PackagePDFN56

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中文翻译

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MDU10N070RH 数据手册

MDU10N070RH

Single N-channel Trench MOSFET 100V, 53A, 7.4mΩ

General Description

Features

The MDU10N070RH uses advanced Magnachip’s

MOSFET Technology, which provides high performance in

on-state resistance, fast switching performance and

excellent quality. MDU10N070RH is suitable device for

Synchronous Rectification for Server and general purpose

applications.



V_DS= 100V

I_D= 53 A @V_GS= 10V

Very low on-resistance R_DS(ON)

< 7.4 mΩ @V_GS= 10V

< 9.1 mΩ @V_GS= 4.5V

100% UIL Tested



100% Rg Tested

Pin 5,6,7,8

Pin 4

PDFN56

Pin 1, 2,3

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

±20

Unit

V_DSS

V_GSS

Gate-Source Voltage

T_C=25^oC (Silicon Limited)

T_C=25^oC (Package Limited)

T_C=100^oC (Silicon Limited)

T_A=25^oC

Continuous Drain Current ⁽¹⁾

I_D

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_DM

212

119

T_C=25^oC

T_C=100^oC

P_D

T_A=25^oC ( T ≤ 10s)

5.5

Single Pulse Avalanche Energy ⁽³⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

22.7

Unit

Thermal Resistance, Junction-to-Ambient ( T ≤ 10s ) ⁽¹⁾

Thermal Resistance, Junction-to-Ambient ( Steady State ) ⁽¹⁾

Thermal Resistance, Junction-to-Case

^oC/W

R_θJA

50.0

R_θJC

1.05

Jul. 2021. Ver. 1.4

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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