5秒后页面跳转
MDFR250A-M PDF预览

MDFR250A-M

更新时间: 2024-11-18 03:49:55
品牌 Logo 应用领域
SANREX 二极管
页数 文件大小 规格书
2页 96K
描述
DIODE MODULE(F.R.D.)

MDFR250A-M 数据手册

 浏览型号MDFR250A-M的Datasheet PDF文件第2页 
F.R.D.)  
DIODE MODULE  
( )  
MDF R 250A-L/M  
diode with flat  
( )  
MDF R 250A-L/M and MDR150-L/M are high speed  
fast recovery  
mounting base which is designed for switching application of high power.  
4-φ7  
FAV)  
RRM  
I
250A V =200/300/400V  
Easy Construction with AnodeFType and CathodeRType  
MDF:anode to terminal normal polarity)  
[
]
MDR:cathode to terminal  
Reverse Recovery TimetrrL Type: 450ns, M Type: 550ns  
High Reliability by Glass passivated Chips  
Non isolated type  
45±0.4  
62  
φ8.5  
24  
Applications)  
Switching Power Supply.  
Inverter Welding Power Supply  
MDF  
MDR  
46  
Unit:㎜  
Maximum Ratings  
Ratings  
Symbol  
Item  
Unit  
( )  
( )  
( )  
MDF R 250A20L/M  
MDF R 250A30L/M  
MDF R 250A40L/M  
VRRM  
VRSM  
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
D.C. Reverse Voltage  
200  
240  
160  
300  
360  
240  
400  
480  
320  
V
V
V
VRDC)  
Symbol  
IFAV)  
Item  
Conditions  
Ratings  
250  
Unit  
A
Average Forward Current  
R.M.S. Forward Current  
Surge Forward Current  
Single phase, half wave, 180conduction, Tc:L/M 83/85℃  
IFRSM)  
A
Single phase, half wave, 180conduction, Tc:L/M 83/85℃  
390  
1
IFMS  
Z
A
cycle, 50/60H , peak value, non-repetitive  
4000/4500  
84000  
2
2
2
2
I
I t  
Value for one cycle of surge cureent  
A S  
t
Tj  
Operating Junction Temperature  
Storage Temperature  
30 to 150  
30 to 125  
4.748)  
11115)  
170  
Tstg  
MountingM6Recommended Value 2.5  
-
-
3.925  
10 90  
-
-
40)  
Mounting  
Torque  
Nm  
(㎏fB)  
Terminal M8Recommended Value 8.8  
105)  
Mass  
Typical Value  
g
Electrical Characteristics  
Symbol  
Item  
Conditions  
Ratings  
Unit  
IRRM  
RRM  
j
60  
mA  
Repetitive Peak Reverse Currentmax.at V , single phase, half wave, T 150℃  
L
1.4  
1.3  
j
Foward current 800A, T 25℃  
VFM  
V
/W  
ns  
Forward Voltage Dropmax.)  
Inst. measurement  
M
Junction to case  
0.2  
Rthj-cThermal Impedancemax.)  
L
450  
550  
trr  
j
F
Reverse Recovery Timemax.T 25℃,I 2A,ーdi/dt20A/μs  
M
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

与MDFR250A-M相关器件

型号 品牌 获取价格 描述 数据表
MDFS10N60D MGCHIP

获取价格

N-Channel MOSFET 600V, 10A, 0.75(ohm)
MDFS10N60DTH MGCHIP

获取价格

N-Channel MOSFET 600V, 10A, 0.75(ohm)
MDFS11N60 MGCHIP

获取价格

N-Channel MOSFET 600V, 11A, 0.55(ohm)
MDFS11N60TH MGCHIP

获取价格

N-Channel MOSFET 600V, 11A, 0.55(ohm)
MDFS11N65B MGCHIP

获取价格

N-Channel MOSFET 650V, 12A, 0.65(ohm)
MDFS11N65BTH MGCHIP

获取价格

N-Channel MOSFET 650V, 12A, 0.65(ohm)
MDFS13N50G MGCHIP

获取价格

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)
MDFS13N50GTH MGCHIP

获取价格

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)
MDG LFS LITTELFUSE

获取价格

Sealed tact switch
MDG01TL ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon