5秒后页面跳转
MDFS13N50GTH PDF预览

MDFS13N50GTH

更新时间: 2024-10-31 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 1131K
描述
N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

MDFS13N50GTH 数据手册

 浏览型号MDFS13N50GTH的Datasheet PDF文件第2页浏览型号MDFS13N50GTH的Datasheet PDF文件第3页浏览型号MDFS13N50GTH的Datasheet PDF文件第4页浏览型号MDFS13N50GTH的Datasheet PDF文件第5页浏览型号MDFS13N50GTH的Datasheet PDF文件第6页 
MDFS13N50G  
N-Channel MOSFET 500V, 13.0A, 0.5  
General Description  
Features  
VDS = 500V  
VDS = 550V @ Tjmax  
ID = 13.0A @ VGS = 10V  
RDS(ON) < 0.5Ω @ VGS = 10V  
These N-channel MOSFET are produced using advanced  
MagnaChip’s MOSFET Technology, which provides low on-  
state resistance, high switching performance and excellent  
quality.  
These devices are suitable device for SMPS, high Speed  
switching and general purpose applications.  
Applications  
Power Supply  
HID  
Lighting  
G
D
S
G
TO-220FT  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Symbol  
VDSS  
Rating  
Unit  
V
Drain-Source Voltage  
500  
550  
±30  
13*  
8.2*  
52*  
42  
Drain-Source Voltage @ Tjmax  
Gate-Source Voltage  
VDSS @ Tjmax  
VGSS  
V
V
TC=25oC  
A
Continuous Drain Current  
ID  
TC=100oC  
A
Pulsed Drain Current(1)  
IDM  
PD  
A
TC=25oC  
W
Power Dissipation  
W/ oC  
Derate above 25 oC  
0.33  
18.7  
4.5  
Repetitive Avalanche Energy(1)  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
EAR  
dv/dt  
EAS  
mJ  
V/ns  
mJ  
580  
Junction and Storage Temperature Range  
* Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Symbol  
RθJA  
Rating  
62.5  
Unit  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
oC/W  
RθJC  
3.0  
1
Sep 2014. Version 2.1  
MagnaChip Semiconductor Ltd.  

与MDFS13N50GTH相关器件

型号 品牌 获取价格 描述 数据表
MDG LFS LITTELFUSE

获取价格

Sealed tact switch
MDG01TL ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG01TR ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG02TL ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG02TR ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG06TL ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG06TR ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG07TL ROHM

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG07TR ROHM

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 6-Element, NPN and PNP, Silicon
MDG110A LIUJING

获取价格

可控硅、晶闸管