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MDFS13N50GTH PDF预览

MDFS13N50GTH

更新时间: 2024-11-20 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 1131K
描述
N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

MDFS13N50GTH 数据手册

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MDFS13N50G  
N-Channel MOSFET 500V, 13.0A, 0.5  
General Description  
Features  
VDS = 500V  
VDS = 550V @ Tjmax  
ID = 13.0A @ VGS = 10V  
RDS(ON) < 0.5Ω @ VGS = 10V  
These N-channel MOSFET are produced using advanced  
MagnaChip’s MOSFET Technology, which provides low on-  
state resistance, high switching performance and excellent  
quality.  
These devices are suitable device for SMPS, high Speed  
switching and general purpose applications.  
Applications  
Power Supply  
HID  
Lighting  
G
D
S
G
TO-220FT  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Symbol  
VDSS  
Rating  
Unit  
V
Drain-Source Voltage  
500  
550  
±30  
13*  
8.2*  
52*  
42  
Drain-Source Voltage @ Tjmax  
Gate-Source Voltage  
VDSS @ Tjmax  
VGSS  
V
V
TC=25oC  
A
Continuous Drain Current  
ID  
TC=100oC  
A
Pulsed Drain Current(1)  
IDM  
PD  
A
TC=25oC  
W
Power Dissipation  
W/ oC  
Derate above 25 oC  
0.33  
18.7  
4.5  
Repetitive Avalanche Energy(1)  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
EAR  
dv/dt  
EAS  
mJ  
V/ns  
mJ  
580  
Junction and Storage Temperature Range  
* Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Symbol  
RθJA  
Rating  
62.5  
Unit  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
oC/W  
RθJC  
3.0  
1
Sep 2014. Version 2.1  
MagnaChip Semiconductor Ltd.  

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