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MDFS11N65B PDF预览

MDFS11N65B

更新时间: 2024-11-07 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 895K
描述
N-Channel MOSFET 650V, 12A, 0.65(ohm)

MDFS11N65B 数据手册

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MDFS11N65B  
N-Channel MOSFET 650V, 12A, 0.65Ω  
General Description  
Features  
These N-channel MOSFET are produced using advanced  
MagnaChip’s MOSFET Technology, which provides low on-  
state resistance, high switching performance and excellent  
quality.  
VDS = 650V  
ID = 12A  
RDS(ON) 0.65Ω  
@ VGS = 10V  
@ VGS = 10V  
Applications  
These devices are suitable device for SMPS, high Speed  
switching and general purpose applications.  
Power Supply  
PFC  
High Current, High Speed Switching  
G
TO-220FT  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
650  
Unit  
V
Gate-Source Voltage  
VGSS  
±30  
V
TC=25oC  
12*  
A
Continuous Drain Current  
ID  
TC=100oC  
7.7*  
A
Pulsed Drain Current(1)  
IDM  
PD  
48*  
A
TC=25oC  
49.6  
0.4  
W
Power Dissipation  
Derate above 25 oC  
W/oC  
mJ  
V/ns  
mJ  
oC  
Repetitive Avalanche Energy(1)  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
EAR  
dv/dt  
EAS  
18.1  
4.5  
750  
Junction and Storage Temperature Range  
* Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
Symbol  
RθJA  
Rating  
62.5  
Unit  
oC/W  
RθJC  
2.52  
1
Jul 2014 Version 1.1  
MagnaChip Semiconductor Ltd.  

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