Datasheet > MDFS10N60D

MDFS10N60D

更新时间： 2024-11-07 01:16:39

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描述
N-Channel MOSFET 600V, 10A, 0.75(ohm)

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MDFS10N60D 数据手册

MDFS10N60D

N-Channel MOSFET 600V, 10A, 0.75Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 600V

I_D= 10A

R_DS(ON)≤ 0.75Ω

@ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

PFC

High Current, High Speed Switching

TO-220FT

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

600

Unit

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

10.0*

6.33*

40*

Continuous Drain Current

I_D

T_C=100^oC

Pulsed Drain Current⁽¹⁾

I_DM

P_D

T_C=25^oC

48.6

0.39

4.86

4.5

Power Dissipation

Derate above 25 ^oC

W/ ^oC

V/ns

^oC

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

580

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

62.5

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

^oC/W

R_θJC

2.57

Mar. 2016 Version 1.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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