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MDFS10N60D PDF预览

MDFS10N60D

更新时间: 2024-11-19 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 942K
描述
N-Channel MOSFET 600V, 10A, 0.75(ohm)

MDFS10N60D 数据手册

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MDFS10N60D  
N-Channel MOSFET 600V, 10A, 0.75Ω  
General Description  
Features  
These N-channel MOSFET are produced using advanced  
MagnaChip’s MOSFET Technology, which provides low on-  
state resistance, high switching performance and excellent  
quality.  
VDS = 600V  
ID = 10A  
RDS(ON) 0.75Ω  
@ VGS = 10V  
@ VGS = 10V  
Applications  
These devices are suitable device for SMPS, high Speed  
switching and general purpose applications.  
Power Supply  
PFC  
High Current, High Speed Switching  
G
D
G
S
TO-220FT  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
600  
Unit  
V
Gate-Source Voltage  
VGSS  
±30  
V
TC=25oC  
10.0*  
6.33*  
40*  
A
Continuous Drain Current  
ID  
TC=100oC  
A
Pulsed Drain Current(1)  
IDM  
PD  
A
TC=25oC  
48.6  
0.39  
4.86  
4.5  
W
Power Dissipation  
Derate above 25 oC  
W/ oC  
mJ  
V/ns  
mJ  
oC  
Repetitive Avalanche Energy(1)  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
EAR  
dv/dt  
EAS  
580  
Junction and Storage Temperature Range  
* Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Symbol  
RθJA  
Rating  
62.5  
Unit  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
oC/W  
RθJC  
2.57  
1
Mar. 2016 Version 1.2  
MagnaChip Semiconductor Ltd.  

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