MCP607-I/SNG

更新时间： 2024-11-23 13:02:43

品牌	Logo	应用领域
美国微芯 - MICROCHIP		运算放大器
页数	文件大小	规格书
32页	480K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCP607-I/SNG 数据手册

MCP606/7/8/9

2.5V to 6.0V Micropower CMOS Op Amp

Description

Features

The MCP606/7/8/9 family of operational amplifiers (op

amps) from Microchip Technology Inc. are unity-gain

stable with low offset voltage (250 µV, maximum).

Performance characteristics include rail-to-rail output

swing capability and low input bias current (80 pA at

+85°C, maximum). These features make this family of

op amps well suited for single-supply, precision,

high-impedance, battery-powered applications.

• Low Input Offset Voltage: 250 µV (maximum)

• Rail-to-Rail Output

• Low Input Bias Current: 80 pA (maximum at

+85°C)

• Low Quiescent Current: 25 µA (maximum)

• Power Supply Voltage: 2.5V to 6.0V

• Unity-Gain Stable

• Chip Select (CS) Capability: MCP608

• Industrial Temperature Range: -40°C to +85°C

• No Phase Reversal

The single is available in standard 8-lead PDIP, SOIC

and TSSOP packages, as well as in a SOT-23-5

package. The single MCP608 with Chip Select (CS) is

offered in the standard 8-lead PDIP, SOIC and TSSOP

packages. The dual MCP607 is offered in the standard

8-lead PDIP, SOIC and TSSOP packages. Finally, the

quad MCP609 is offered in the standard 14-lead PDIP,

SOIC and TSSOP packages. All devices are fully

specified from -40°C to +85°C, with power supplies

from 2.5V to 6.0V.

• Available in Single, Dual and Quad Packages

Typical Applications

• Battery Power Instruments

• High-Impedance Applications

• Strain Gauges

• Medical Instruments

• Test Equipment

Package Types

MCP606

PDIP, SOIC,TSSOP

MCP606

SOT-23-5

Design Aids

NC 1

V_OUT

V_SS

V_IN+

V_DD

• SPICE Macro Models

• FilterLab^®Software

V_IN–

V_IN+

V_SS

V_DD

V_OUT

V_IN–

• Mindi™ Circuit Designer & Simulator

• Analog Demonstration and Evaluation Boards

• Application Notes

5 NC

MCP607

PDIP, SOIC,TSSOP

MCP608

PDIP, SOIC,TSSOP

Typical Application

V_OUTA

NC 1

V_DD

V_INA

–

V_OUTBV_IN–

V_DD

V_OUT

V_OUT= V_LM+ I R

(R ⁄ R_G)

SEN

I_L

V_INB

–

V_IN+

V_SS

5 V_INB

5 NC

V_SS

R_F

R_G

To Load

(V_LP

)

50 kΩ

MCP609

PDIP, SOIC,TSSOP

5 kΩ

2.5V

6.0V

V_OUTA

V_OUTD

V_OUT

V_INA

–

V_IND

–

MCP606

R_SEN

10Ω

To Load

11 V_SS

(V_LM

)

V_DD

V_INB

–

V_INC

–

Low-Side Battery Current Sensor

8 V_OUTC

V_OUTB

DS11177E-page 1

12 3 4 5 6 7...32

中文翻译

下载PDF

与MCP607-I/SNG相关器件

型号	品牌	获取价格	描述	数据表
MCP607I/ST	MICROCHIP	获取价格	2.5V TO 5.5V MICROPOWER CMOS OP AMPS
MCP607-I/ST	MICROCHIP	获取价格	暂无描述
MCP607-IP	MICROCHIP	获取价格	2.5V to 6.0V Micropower CMOS Op Amp
MCP607T	MICROCHIP	获取价格	2.5V to 6.0V Micropower CMOS Op Amp
MCP607TI/OT	MICROCHIP	获取价格	2.5V TO 5.5V MICROPOWER CMOS OP AMPS
MCP607TI/P	MICROCHIP	获取价格	2.5V TO 5.5V MICROPOWER CMOS OP AMPS
MCP607T-I/P	MICROCHIP	获取价格	DUAL OP-AMP, 250 uV OFFSET-MAX, 0.155 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8
MCP607TI/SL	MICROCHIP	获取价格	2.5V TO 5.5V MICROPOWER CMOS OP AMPS
MCP607T-I/SL	MICROCHIP	获取价格	OP-AMP, PDSO14, 3.90 MM, PLASTIC, SOIC-14
MCP607TI/SN	MICROCHIP	获取价格	2.5V TO 5.5V MICROPOWER CMOS OP AMPS

与MCP607-I/SNG相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

27
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

MCP607-I/SNG

MCP607-I/SNG 数据手册

与MCP607-I/SNG相关器件

与MCP607-I/SNG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCP607-I/SNG

MCP607-I/SNG 数据手册

与MCP607-I/SNG相关器件

与MCP607-I/SNG相关文章

您还可以找

您在本页遇到什么问题？