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MCM67B518

更新时间: 2024-11-10 22:22:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
12页 210K
描述
32K x 18 Bit BurstRAM Synchronous Fast Static RAM

MCM67B518 数据手册

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Order this document  
by MCM67B518/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM67B518  
32K x 18 Bit BurstRAM  
Synchronous Fast Static RAM  
With Burst Counter and Self–Timed Write  
The MCM67B518 is a 589,824 bit synchronous fast static random access  
memory designed to provide a burstable, high–performance, secondary cache  
for the i486 and Pentium microprocessors. It is organized as 32,768 words  
of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS  
technology. The device integrates input registers, a 2–bit counter, high speed  
SRAM, and high drive capability outputs onto a single monolithic circuit for re-  
duced parts count implementation of cache data RAM applications. Synchro-  
nous design allows precise cycle control with the use of an external clock (K).  
BiCMOS circuitry reduces the overall power consumption of the integrated func-  
tions for greater reliability.  
FN PACKAGE  
PLASTIC  
CASE 778–02  
PIN ASSIGNMENTS  
Addresses (A0 – A14), data inputs (D0 – D17), and all control signals except  
output enable (G) are clock (K) controlled through positive–edge–triggered  
noninverting registers.  
7
6
5
4
3
2
1 52 51 50 49 48 47  
46  
8
9
Bursts canbeinitiatedwitheitheraddressstatusprocessor(ADSP) or address  
status cache controller (ADSC) input pins. Subsequent burst addresses can be  
generated internally by the MCM67B518 (burst sequence imitates that of the  
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.  
The following pages provide more detailed information on burst controls.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased flexibility for incoming signals.  
Dual write enables (LW and UW) are provided to allow individually writeable  
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17  
(the upper bits).  
This device is ideally suited for systems that require wide data bus widths and  
cache memory. See Figure 2 for applications information.  
DQ9  
DQ10  
DQ8  
DQ7  
DQ6  
45  
44  
43  
42  
41  
40  
39  
V
V
10  
CC  
SS  
11  
12  
13  
14  
15  
V
CC  
DQ12  
V
SS  
DQ11  
DQ13  
DQ14  
DQ5  
DQ4  
DQ3  
V
16  
17  
38  
37  
DQ2  
SS  
V
V
CC  
SS  
DQ15  
DQ16  
DQ17  
18  
19  
20  
36  
35  
34  
V
CC  
DQ1  
DQ0  
21 22 23 24 25 26 27 28 29 30 31 32 33  
Single 5 V ± 5% Power Supply  
Fast Access Times: 9/10/12 ns Max  
Byte Writeable via Dual Write Enables  
Internal Input Registers (Address, Data, Control)  
Internally Self–Timed Write Cycle  
ADSP, ADSC, and ADV Burst Control Pins  
Asynchronous Output Enable Controlled Three–State Outputs  
Common Data Inputs and Data Outputs  
3.3 V I/O Compatible  
PIN NAMES  
A0 – A14 . . . . . . . . . . . . . . . . Address Inputs  
K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock  
ADV . . . . . . . . . . . . . Burst Address Advance  
LW . . . . . . . . . . . . . Lower Byte Write Enable  
UW . . . . . . . . . . . . . Upper Byte Write Enable  
ADSC . . . . . . . . . Controller Address Status  
ADSP . . . . . . . . . . Processor Address Status  
E . . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable  
G . . . . . . . . . . . . . . . . . . . . . . . Output Enable  
DQ0 – DQ17 . . . . . . . . . . . Data Input/Output  
High Board Density 52–Lead PLCC Package  
V
V
. . . . . . . . . . . . . . . . + 5 V Power Supply  
. . . . . . . . . . . . . . . . . . . . . . . . . . . Ground  
CC  
SS  
NC . . . . . . . . . . . . . . . . . . . . . . No Connection  
All power supply and ground pins must be  
connected for proper operation of the device.  
BurstRAM is a trademark of Motorola, Inc.  
i486 and Pentium are trademarks of Intel Corp.  
REV 2  
5/95  
Motorola, Inc. 1994  

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