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MCM67B618FN12 PDF预览

MCM67B618FN12

更新时间: 2024-11-21 14:53:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 信息通信管理静态存储器内存集成电路
页数 文件大小 规格书
12页 219K
描述
Cache SRAM, 64KX18, 12ns, BICMOS, PQCC52, PLASTIC, LCC-52

MCM67B618FN12 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:PLASTIC, LCC-52Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.88Is Samacsys:N
最长访问时间:12 ns其他特性:SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O 类型:COMMONJESD-30 代码:S-PQCC-J52
JESD-609代码:e0长度:19.1262 mm
内存密度:1179648 bit内存集成电路类型:CACHE SRAM
内存宽度:18功能数量:1
端口数量:1端子数量:52
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX18
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC52,.8SQ封装形状:SQUARE
封装形式:CHIP CARRIER并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
座面最大高度:4.57 mm最大待机电流:0.095 A
最小待机电流:4.75 V子类别:SRAMs
最大压摆率:0.25 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:BICMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD宽度:19.1262 mm
Base Number Matches:1

MCM67B618FN12 数据手册

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Order this document  
by MCM67B618/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM67B618  
64K x 18 Bit BurstRAM  
Synchronous Fast Static RAM  
With Burst Counter and Self–Timed Write  
The MCM67B618 is a 1,179,648 bit synchronous fast static random access  
memory designed to provide a burstable, high–performance, secondary cache  
for the i486 and Pentium microprocessors. It is organized as 65,536 words  
of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS  
technology. The device integrates input registers, a 2–bit counter, high speed  
SRAM, and high drive capability outputs onto a single monolithic circuit for re-  
duced parts count implementation of cache data RAM applications. Synchro-  
nous design allows precise cycle control with the use of an external clock (K).  
BiCMOS circuitry reduces the overall power consumption of the integrated func-  
tions for greater reliability.  
FN PACKAGE  
PLASTIC  
CASE 778–02  
PIN ASSIGNMENTS  
Addresses (A0 – A15), data inputs (D0 – D17), and all control signals except  
output enable (G) are clock (K) controlled through positive–edge–triggered  
noninverting registers.  
7
6
5
4
3
2
1 52 51 50 49 48 47  
46  
8
9
DQ9  
DQ10  
DQ8  
DQ7  
DQ6  
Bursts canbeinitiatedwitheitheraddressstatusprocessor(ADSP) or address  
status cache controller (ADSC) input pins. Subsequent burst addresses can be  
generated internally by the MCM67B618 (burst sequence imitates that of the  
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.  
The following pages provide more detailed information on burst controls.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased flexibility for incoming signals.  
Dual write enables (LW and UW) are provided to allow individually writeable  
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17  
(the upper bits).  
This device is ideally suited for systems that require wide data bus widths and  
cache memory. See Figure 2 for applications information.  
45  
44  
43  
V
V
10  
CC  
SS  
11  
V
CC  
DQ11  
DQ12  
DQ13  
12  
13  
14  
42  
41  
40  
V
DQ5  
DQ4  
SS  
DQ14  
15  
16  
17  
18  
19  
20  
39  
38  
37  
36  
35  
34  
DQ3  
DQ2  
V
SS  
V
V
CC  
SS  
DQ15  
DQ16  
DQ17  
V
CC  
DQ1  
DQ0  
21 22 23 24 25 26 27 28 29 30 31 32 33  
Single 5 V ± 5% Power Supply  
Fast Access Times: 9/10/12 ns Max  
PIN NAMES  
Byte Writeable via Dual Write Enables  
Internal Input Registers (Address, Data, Control)  
Internally Self–Timed Write Cycle  
ADSP, ADSC, and ADV Burst Control Pins  
Asynchronous Output Enable Controlled Three–State Outputs  
Common Data Inputs and Data Outputs  
3.3 V I/O Compatible  
A0 – A15 . . . . . . . . . . . . . . . . . Address Inputs  
K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock  
ADV . . . . . . . . . . . . . Burst Address Advance  
LW . . . . . . . . . . . . . Lower Byte Write Enable  
UW . . . . . . . . . . . . . Upper Byte Write Enable  
ADSC . . . . . . . . . Controller Address Status  
ADSP . . . . . . . . . . Processor Address Status  
E . . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable  
G . . . . . . . . . . . . . . . . . . . . . . . Output Enable  
DQ0 – DQ17 . . . . . . . . . . . Data Input/Output  
High Board Density 52–Lead PLCC Package  
V
V
. . . . . . . . . . . . . . . . . + 5 V Power Supply  
. . . . . . . . . . . . . . . . . . . . . . . . . . . Ground  
CC  
SS  
NC . . . . . . . . . . . . . . . . . . . . . . No Connection  
All power supply and ground pins must be  
connectedfor proper operation of the device.  
BurstRAM is a trademark of Motorola, Inc.  
i486 and Pentium are trademarks of Intel Corp.  
REV 7  
5/95  
Motorola, Inc. 1994  

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