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MCM6249WJ35 PDF预览

MCM6249WJ35

更新时间: 2024-11-10 22:14:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 存储
页数 文件大小 规格书
7页 120K
描述
1M x4 Bit Static Random Access Memory

MCM6249WJ35 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOJ, SOJ32,.44Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:35 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0长度:20.96 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:4功能数量:1
端口数量:1端子数量:32
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX4
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:3.75 mm
最大待机电流:0.000015 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.14 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

MCM6249WJ35 数据手册

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Order this document  
by MCM6249/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM6249  
1M x 4 Bit Static Random  
Access Memory  
The MCM6249 is a 4,194,304 bit static random access memory organized as  
1,048,576 words of 4 bits, fabricated using high–performance silicon–gate  
CMOS technology. Static design eliminates the need for external clocks or timing  
strobes, while CMOS circuitry reduces power consumption and provides for  
greater reliability.  
WJ PACKAGE  
400 MIL SOJ  
CASE 857A–02  
The MCM6249 is equipped with chip enable (E) and output enable (G) pins,  
allowing for greater system flexibility and eliminating bus contention problems.  
Either input, when high, will force the outputs into high impedance.  
TheMCM6249isavailableina400mil, 32–leadsurface–mountSOJpackage.  
PIN ASSIGNMENT  
A1  
Single 5 V ± 10% Power Supply  
Fast Access Time: 20/25/35 ns  
Equal Address and Chip Enable Access Time  
All Inputs and Outputs are TTL Compatible  
Three–State Outputs  
A7  
A8  
1
2
32  
31  
30  
29  
28  
27  
A0  
A5  
A9  
3
4
5
6
7
8
9
A4  
A17  
A6  
A19  
G
Power Operation: 190/175/160 mA Maximum, Active AC  
E
DQ3  
DQ0  
26  
25  
24  
23  
22  
21  
20  
19  
BLOCK DIAGRAM  
V
V
SS  
CC  
A13  
V
V
CC  
SS  
A12  
DQ2  
A2  
DQ1  
W
10  
A11  
A10  
11  
12  
A13  
A16  
13  
14  
15  
A15  
A14  
A3  
MEMORY MATRIX  
1024 ROWS x  
4096 COLUMNS  
A18  
A10  
A11  
A12  
A9  
A8  
A7  
A6  
ROW  
DECODER  
18  
17  
NC  
16  
A5  
A4  
PIN NAMES  
A0 – A19 . . . . . . . . . . . . Address Inputs  
W . . . . . . . . . . . . . . . . . . . . Write Enable  
G . . . . . . . . . . . . . . . . . . . Output Enable  
E . . . . . . . . . . . . . . . . . . . . . . Chip Enable  
DQ0 – DQ3 . . . . . . . . Data Input/Output  
NC . . . . . . . . . . . . . . . . . No Connection  
COLUMN I/O  
DQ0  
DQ3  
E
COLUMN DECODER  
INPUT  
DATA  
CONTROL  
V
CC  
V
SS  
. . . . . . . . . . . . + 5 V Power Supply  
. . . . . . . . . . . . . . . . . . . . . . . Ground  
A18 A17 A16 A15 A14 A19 A3 A2 A1  
A0  
DQ0  
DQ3  
W
G
REV 4  
5/95  
Motorola, Inc. 1995  

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