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MCM62486B

更新时间: 2024-11-10 22:54:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
12页 201K
描述
32K x 9 Bit BurstRAM Synchronous Static RAM

MCM62486B 数据手册

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by MCM62486B/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM62486B  
32K x 9 Bit BurstRAM  
Synchronous Static RAM  
With Burst Counter and Self–Timed Write  
The MCM62486B is a 294,912 bit synchronous static random access  
memory designed to provide a burstable, high–performance, secondary cache  
for the i486 and Pentium microprocessors. It is organized as 32,768 words of  
9 bits, fabricated with Motorola’s high–performance silicon–gate CMOS  
technology. The device integrates input registers, a 2–bit counter, high speed  
SRAM, and high drive capability outputs onto a single monolithic circuit for re-  
duced parts count implementation of cache data RAM applications. Synchro-  
nous design allows precise cycle control with the use of an external clock (K).  
CMOS circuitry reduces the overall power consumption of the integrated func-  
tions for greater reliability.  
FN PACKAGE  
44–LEAD PLCC  
CASE 777–01  
PIN ASSIGNMENT  
Addresses (A0 – A14), data inputs (D0 – D8), and all control signals except  
output enable (G) are clock (K) controlled through positive–edge–triggered  
noninverting registers.  
6
5
4
3
2
1
44 43 42 41 40  
39  
A11  
A12  
A13  
A14  
A2  
A3  
A4  
A5  
A6  
7
8
9
38  
37  
36  
35  
Bursts canbeinitiatedwitheitheraddressstatusprocessor(ADSP) or address  
status cache controller (ADSC) input pins. Subsequent burst addresses can be  
generated internally by the MCM62486B (burst sequence imitates that of the  
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.  
The following pages provide more detailed information on burst controls.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased flexibility for incoming signals.  
The MCM62486B will be available in a 44–pin plastic leaded chip carrier  
(PLCC). Multiple power and ground pins have been utilized to minimize effects  
induced by output noise. Separate power and ground pins have been employed  
for DQ0 – DQ8 to allow user–controlled output levels of 5 volts or 3.3 volts.  
10  
11  
12  
13  
14  
15  
16  
17  
V
SS  
V
DQ7  
DQ6  
V
34  
33  
SS  
DQ0  
DQ1  
SSQ  
CCQ  
DQ2  
32  
31  
30  
29  
SSQ  
V
V
V
CCQ  
DQ5  
DQ4  
18 19 20 21 22 23 24 25 26 27 28  
Single 5 V ± 10% Power Supply (± 5% for MCM62486BFN11)  
PIN NAMES  
Choice of 5 V or 3.3 V ± 10% Power Supplies for Output Level  
Compatibility  
Fast Access Times:11/12/14/19 ns Max and Cycle Times:15/20/25 ns Min  
Internal Input Registers (Address, Data, Control)  
Internally Self–Timed Write Cycle  
ADSP, ADSC, and ADV Burst Control Pins  
Asynchronous Output Enable Controlled Three–State Outputs  
Common Data Inputs and Data Outputs  
High Output Drive Capability: 85 pF per I/O  
High Board Density PLCC Package  
A0 – A14 . . . . . . . . . . . . . . . . Address Inputs  
K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock  
W . . . . . . . . . . . . . . . . . . . . . . . . Write Enable  
G . . . . . . . . . . . . . . . . . . . . . . Output Enable  
S0, S1 . . . . . . . . . . . . . . . . . . . . Chip Selects  
ADV . . . . . . . . . . . . Burst Address Advance  
ADSP, ADSC . . . . . . . . . . . . Address Status  
DQ0 – DQ8 . . . . . . . . . . . Data Input/Output  
V
V
V
V
. . . . . . . . . . . . . . . . + 5 V Power Supply  
. . . . . . . Output Buffer Power Supply  
. . . . . . . . . . . . . . . . . . . . . . . . . . Ground  
. . . . . . . . . . . . Output Buffer Ground  
CC  
CCQ  
SS  
SSQ  
Fully TTL–Compatible  
Active High and Low Chip Select Inputs for Easy Depth Expansion  
All power supply and ground pins must be con-  
nectedfor proper operation of the device. V  
CC  
V
CCQ  
at all times including power up.  
BurstRAM is a trademark of Motorola, Inc.  
i486 and Pentium are trademarks of Intel Corp.  
REV 2  
5/95  
Motorola, Inc. 1994  

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