Datasheet > MCD220-28IO2

MCD220-28IO2

更新时间： 2024-11-05 19:50:31

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	543K
描述
Silicon Controlled Rectifier,

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技术参数
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MCD220-28IO2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
触发设备类型：	SCR	Base Number Matches：	1

MCD220-28IO2 数据手册

Date: 20.08.2015

IXYS

Data Sheet Issue: 1

Thyristor/Diode Modules M##220

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

2800

220-28io3

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

V_DRM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

2800

2900

2800

2900

V_DSM

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

Maximum average on-state current, T_C= 85°C ²⁾

Maximum average on-state current. T_C= 100°C ²⁾

235

165

I_T(RMS)MNominal RMS on-state current, T_C= 55°C ²⁾

543

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_C= 55°C

455

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM£ 10V ³⁾

5.00

kA²s

5.50

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

125

I²t

150

I²t capacity for fusing t_p= 10 ms, V_RM£ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

100

(di/dt)_cr

A/µs

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

Peak reverse gate voltage

200

V_RGM

P_GM

Peak forward gate power

V_ISOL

T_{vj op}

T_stg

Isolation Voltage ⁵⁾

3000

-40 to +125

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for T_vjbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 125°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, di_g/dt = 1A/µs, T_C= 125°C.

5) AC RMS voltage, 50 Hz, 1min test

Rating Report. Type M##220-28io3 Issue 1

Page 1 of 5

August, 2015

12 3 4 5 6

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