5秒后页面跳转
MCD255-14IO1 PDF预览

MCD255-14IO1

更新时间: 2024-11-17 22:45:23
品牌 Logo 应用领域
IXYS 可控硅二极管
页数 文件大小 规格书
4页 101K
描述
Thyristor Modules Thyristor/Diode Modules

MCD255-14IO1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.78
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN SERIES DIODE最大直流栅极触发电流:150 mA
最大直流栅极触发电压:2 V快速连接描述:G-GR
螺丝端子的描述:A-K-AK最大维持电流:150 mA
JESD-30 代码:R-XUFM-X5最大漏电流:40 mA
通态非重复峰值电流:9600 A元件数量:1
端子数量:5最大通态电流:250000 A
最高工作温度:130 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:450 A
断态重复峰值电压:1400 V重复峰值反向电压:1400 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR

MCD255-14IO1 数据手册

 浏览型号MCD255-14IO1的Datasheet PDF文件第2页浏览型号MCD255-14IO1的Datasheet PDF文件第3页浏览型号MCD255-14IO1的Datasheet PDF文件第4页 
MCC 255  
MCD 255  
ITRMS = 2x 450 A  
ITAVM = 2x 250 A  
VRRM = 1200-1800 V  
Thyristor Modules  
Thyristor/Diode Modules  
3
7
6
VRSM  
VDSM  
VRRM  
VDRM  
Type  
5
2
4
V
V
1
1300  
1500  
1700  
1900  
1200  
1400  
1600  
1800  
MCC 255-12io1  
MCC 255-14io1  
MCC 255-16io1  
MCC 255-18io1  
MCD 255-12io1  
MCD 255-14io1  
MCD 255-16io1  
MCD 255-18io1  
3
3
6 7 1  
5 4 2  
Symbol  
Test Conditions  
Maximum Ratings  
MCC  
MCD  
ITRMS, IFRMS  
TVJ = TVJM  
TC = 85°C; 180° sine  
450  
250  
A
A
I
TAVM, IFAVM  
1
5 4 2  
ITSM, IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
9000  
9600  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
7800  
8600  
A
A
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
405 000  
382 000  
A2s  
A2s  
Features  
International standard package  
Direct copper bonded Al2O3-ceramic  
with copper base plate  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
304 000  
307 000  
A2s  
A2s  
Planar passivated chips  
Isolation voltage 3600 V~  
UL registered E 72873  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 860 A  
100  
A/ms  
f =50 Hz, tP =200 ms  
VD = 2/3 VDRM  
IG = 1 A,  
Keyed gate/cathode twin pins  
non repetitive, IT = ITAVM  
500  
1000  
120  
A/ms  
V/ms  
W
diG/dt = 1 A/ms  
Applications  
(dv/dt)cr  
PGM  
TVJ = TVJM; VDR = 2/3 VDRM  
GK = ¥; method 1 (linear voltage rise)  
Motor control, softstarter  
Power converter  
Heat and temperature control for  
industrial furnaces and chemical  
processes  
R
TVJ = TVJM  
IT = ITAVM  
tP = 30 ms  
tP = 500 ms  
60  
20  
10  
W
W
V
PGAV  
VRGM  
Lighting control  
Solid state switches  
TVJ  
TVJM  
Tstg  
-40...+130  
130  
-40...+125  
°C  
°C  
°C  
Advantages  
Simple mounting  
Improved temperature and power  
cycling  
Reduced protection circuits  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
IISOL £ 1 mA  
Md  
Mounting torque (M6)  
Terminal connection torque (M8)  
Typical including screws  
4.5-7/40-62 Nm/lb.in.  
11-13/97-115 Nm/lb.in.  
Weight  
750  
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 4  

与MCD255-14IO1相关器件

型号 品牌 获取价格 描述 数据表
MCD255-16IO1 IXYS

获取价格

Thyristor Modules Thyristor/Diode Modules
MCD255-16IO1 LITTELFUSE

获取价格

晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。
MCD255-18IO1 IXYS

获取价格

Thyristor Modules Thyristor/Diode Modules
MCD255-18IO1 LITTELFUSE

获取价格

晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。
MCD26-04IO8 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 50000mA I(T), 400V V(RRM),
MCD26-04IO8B IXYS

获取价格

Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme
MCD26-06IO8 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 50000mA I(T), 600V V(RRM),
MCD26-06IO8B IXYS

获取价格

Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 600V V(DRM), 600V V(RRM), 1 Eleme
MCD26-08IO1B IXYS

获取价格

Thyristor Modules Thyristor/Diode Modules
MCD26-08IO1B LITTELFUSE

获取价格

晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。