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MC74HC4046ADTR2 PDF预览

MC74HC4046ADTR2

更新时间： 2024-01-07 16:59:37
品牌 Logo 应用领域
安森美 - ONSEMI 信号电路锁相环或频率合成电路光电二极管
页数 文件大小 规格书
18页 167K
描述
Phase−Locked Loop

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MC74HC4046ADTR2 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TSSOP
包装说明：HALOGEN FREE AND ROHS COMPLIANT, TSSOP-16针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：8.17
Is Samacsys：N模拟集成电路 - 其他类型：PHASE LOCKED LOOP
JESD-30 代码：R-PDSO-G16JESD-609代码：e4
长度：5 mm湿度敏感等级：1
功能数量：1端子数量：16
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP16,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：260
电源：2/6 V认证状态：Not Qualified
座面最大高度：1.2 mm子类别：PLL or Frequency Synthesis Circuits
最大供电电压 (Vsup)：6 V最小供电电压 (Vsup)：2 V
标称供电电压 (Vsup)：4.5 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：4.4 mm
Base Number Matches：1

MC74HC4046ADTR2 数据手册

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MC74HC4046A  
Pin No.  
Symbol  
Name and Function  
1
2
3
PCP  
PC1  
COMP  
Phase Comparator Pulse Output  
Phase Comparator 1 Output  
Comparator Input  
OUT  
PCP  
PC1  
1
2
16  
V
CC  
out  
out  
OUT  
15 PC3  
out  
out  
IN  
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
VCO  
INH  
C1A  
C1B  
GND  
VCO Output  
Inhibit Input  
Capacitor C1 Connection A  
Capacitor C1 Connection B  
Ground (0 V) V  
VCO Input  
OUT  
COMP  
VCO  
3
4
14 SIG  
in  
in  
13 PC2  
12 R2  
11 R1  
out  
INH  
C1A  
5
6
7
8
SS  
VCO  
DEM  
IN  
Demodulator Output  
OUT  
C1B  
10 DEM  
out  
R1  
R2  
PC2  
Resistor R1 Connection  
Resistor R2 Connection  
Phase Comparator 2 Output  
Signal Input  
Phase Comparator 3 Output  
Positive Supply Voltage  
GND  
9
VCO  
in  
OUT  
SIG  
IN  
Figure 1. Pin Assignment  
PC3  
OUT  
V
CC  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 1.5 to V + 1.5  
V
in  
CC  
V
– 0.5 to V + 0.5  
V
out  
CC  
I
20  
25  
50  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
CC  
DC Supply Current, V and GND Pins  
in  
out  
CC  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
Power Dissipation in Still Air  
Plastic DIP†  
SOIC Package†  
750  
500  
D
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
Storage Temperature  
– 65 to + 150  
_C  
_C  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
Plastic DIP and SOIC Package†  
L
260  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings  
applied to the device are individual stress limit values (not normal operating conditions) and are not  
valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C  
SOIC Package: – 7 mW/_C from 65_ to 125_C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
3.0  
2.0  
0
Max  
6.0  
Unit  
V
V
CC  
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Supply Voltage (Referenced to GND) NON−VCO  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
6.0  
V
V , V  
in out  
V
V
CC  
T
A
– 55  
+ 125  
_C  
ns  
t , t  
r
Input Rise and Fall Time  
(Pin 5)  
V
V
V
= 2.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
500  
400  
f
CC  
CC  
CC  
http://onsemi.com  
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