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MC5611

更新时间： 2024-11-15 04:16:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 高压高功率电源快速恢复大电源快速恢复二极管
页数 文件大小 规格书
2页 277K
描述
FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE RECTIFIERS

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中文翻译

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MC5611 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：HERMETIC SEALED, GLASS, S PACKAGE-2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.44其他特性：HIGH RELIABILITY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LALF-W2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：0.63 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED最大重复峰值反向电压：2000 V
最大反向恢复时间：0.3 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MC5611 数据手册

 浏览型号MC5611的Datasheet PDF文件第2页 
MC5610 thru MC5619  
FAST RECOVERY, HIGH POWER,  
MICRO, HIGH VOLTAGE RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The MC5610 through MC5619 series of fast recovery high voltage silicon  
rectifiers feature the smallest packages available. They are ideal for high-  
reliability where a failure cannot be tolerated. These 0.275 to 0.790 Amp  
rated rectifiers for working peak reverse voltages from 1500 to 5000 volts are  
hermetically sealed with voidless-glass construction using an internal  
“Category I” metallurgical bond. Typical applications include transmitters,  
power supplies, radar equipment and X-ray machines. Surface mount MELF  
package configurations are also available by adding “SM” suffix. Microsemi  
also offers numerous other rectifier products to meet higher and lower  
current ratings with various recovery time speed requirements including fast  
and ultrafast device types in both through-hole and surface mount packages.  
S Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
•
Voidless Hermetically Sealed Glass Package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Lowest Reverse Leakage Available  
Lowest Thermal Resistance Available  
Absolute High Voltage / High Temperature Stability  
•
High voltage fast recovery rectifiers 1500 to 5000 V  
•
•
Military and other high-reliability applications  
Applications include bridges, half-bridges, catch  
diodes, voltage multipliers, X-ray machines, power  
supplies, transmitters, and radar equipment  
High forward surge current capability  
•
•
Extremely robust construction  
Surface mount equivalents also available in a square  
•
Inherently radiation hard as described in Microsemi  
end-cap MELF configuration with “SM” suffix  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Operating Temperature Range:  
•
•
CASE: Hermetically sealed voidless hard glass with  
MC5610 – MC5612……-55oC to 150oC  
MC5613 – MC5616……-65oC to 150oC  
MC5617 – MC5619……-65oC to 125oC  
Storage Temperature Range: -65oC to 175oC  
Tungsten slugs  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 400 mg (approx)  
See package dimensions on last page  
•
•
•
•
•
•
•
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
•
Average Rectified Forward Current (IO): See  
Electrical Characteristics for maximum rating at 55oC  
and 100oC. Also see typical linear derating in Fig 1.  
•
•
Forward Surge Current: See Electrical  
Characteristics for surge at 8.3 ms half-sine wave  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright 2004  
Microsemi  
Page 1  
12-29 2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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与MC5611相关器件

型号 品牌 获取价格 描述 数据表
MC5611E3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.63A, 2000V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED,
MC5611SM MICROSEMI

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 		Rectifier Diode, 1 Element, 0.63A, 2000V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
MC5611SME3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.63A, Silicon, HERMETIC SEALED, GLASS, MELF-2
MC5612 MICROSEMI

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 		FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE RECTIFIERS
MC5612E3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.53A, 2500V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED,
MC5612SM MICROSEMI

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 		Rectifier Diode, 1 Element, 0.53A, Silicon, HERMETIC SEALED, GLASS, MELF-2
MC5612SME3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.53A, Silicon, HERMETIC SEALED, GLASS, MELF-2
MC5613 MICROSEMI

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 		FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE RECTIFIERS
MC5613E3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.975A, 1500V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED
MC5613SME3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.975A, Silicon, HERMETIC SEALED, GLASS, MELF-2

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