SEMICONDUCTOR TECHNICAL DATA
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
20
20
High–Performance Silicon–Gate CMOS
The MC54/74HCT373A may be used as a level converter for
interfacing TTL or NMOS outputs to High–Speed CMOS inputs.
The HCT373A is identical in pinout to the LS373.
The eight latches of the HCT373A are transparent D–type latches.
While the Latch Enable is high the Q outputs follow the Data Inputs. When
Latch Enable is taken low, data meeting the setup and hold times
becomes latched.
The Output Enable does not affect the state of the latch, but when
Output Enable is high, all outputs are forced to the high–impedance state.
Thus, data may be latched even when the outputs are not enabled.
The HCT373A is identical in function to the HCT573A, which has the
input pins on the opposite side of the package from the output pins. This
device is similar in function to the HCT533A, which has inverting outputs.
1
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
1
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
20
20
20
1
SD SUFFIX
SSOP PACKAGE
CASE 940C–03
1
DT SUFFIX
TSSOP PACKAGE
CASE 948E–02
1
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
ORDERING INFORMATION
MC54HCTXXXAJ
MC74HCTXXXAN
MC74HCTXXXADW
MC74HCTXXXASD
MC74HCTXXXADT
Ceramic
Plastic
SOIC
SSOP
TSSOP
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
•
Chip Complexity: 196 FETs or 49 Equivalent Gates
LOGIC DIAGRAM
PIN ASSIGNMENT
OUTPUT
ENABLE
Q0
1
20
V
CC
3
2
5
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
D0
D1
D2
D3
D4
2
3
19
18
Q7
D7
4
D0
D1
6
7
4
17
D6
8
9
Q1
Q2
5
16
15
14
13
12
11
Q6
Q5
D5
D4
Q4
DATA
INPUTS
NONINVERTING
OUTPUTS
6
13
12
15
16
19
D2
7
14
17
18
D5
D6
D7
D3
8
Q3
9
LATCH
ENABLE
GND
10
11
1
PIN 20 = V
CC
PIN 10 = GND
LATCH ENABLE
OUTPUT ENABLE
FUNCTION TABLE
Inputs
Output
Design Criteria
Internal Gate Count*
Value
49
Units
ea.
ns
Output Latch
Enable Enable
D
Q
L
L
L
H
H
L
H
L
X
X
H
Internal Gate Propagation Delay
Internal Gate Power Dissipation
1.5
L
No Change
Z
5.0
µW
pJ
H
X
X = don’t care
Z = high impedance
Speed Power Product
.0075
* Equivalent to a two–input NAND gate.
2/97
REV 7
1
Motorola, Inc. 1997